N掺杂ZnO的缺陷识别与物性调控  

Identification and control of defects in nitrogen-doped ZnO

作　　者：汤琨[1] 姚峥嵘[1,2] 许钟华 杜倩倩 朱顺明 叶建东[1] 顾书林[1] Kun Tang;Zhengrong Yao;Zhonghua Xu;Qianqian Du;Shunming Zhu;Jiandong Ye;Shulin Gu(School of Electronic Science and Engineering,Nanjing University,Nanjing 210046,China;Shool of Science,China Pharmaceutical University,Nanjing 211198,China;College of Physics and Electronic Engineering,Guangxi Normal University for Nationalities,Chongzuo 532200,China;School of Physics Science and Information Technology,Liaocheng University,Liaocheng 252000,China)

机构地区：[1]南京大学电子科学与工程学院,南京210046 [2]中国药科大学理学院,南京211198 [3]广西民族师范学院物理与电子工程学院,崇左532200 [4]聊城大学物理科学与信息工程学院,聊城252000

出　　处：《科学通报》2020年第25期2708-2720,共13页Chinese Science Bulletin

基　　金：国家自然科学基金(61974059,61674077,61504057,61574075);江苏省自然科学基金(BK20150585)资助。

摘　　要：ZnO由于其室温下激子稳定存在,因此是一种具备高效发光性能的宽禁带半导体材料.然而,由于ZnO材料本征缺陷种类繁多、性质复杂,且缺乏合适的p型掺杂剂,其出色的光电性能一直未得到应用.近年来,越来越多的研究工作指出,ZnO的材料性质极大程度依赖于其中杂质缺陷的组成,因此对ZnO中缺陷的种类识别和调控手段的研究成为ZnO材料走向应用前待解决的重要问题.本文结合近年来的研究进展,介绍了ZnO中各类本征缺陷的性质和调控手段,指出了N掺杂ZnO体系中受主的主要来源,获得了抑制补偿施主和诱导浅受主的一系列有效方法.在此基础上,提出了等价元素-受主共掺技术,实现了ZnO纳米材料的p型掺杂及同质结LED,并进一步拓展了ZnO纳米材料应用于存储器和宽频光探测器.ZnO is regarded as a wide band gap semiconductor with high-efficient luminescent properties due to the stable existence of excitons at room-temperature.However,the prominent opto-electronic properties have not been achieved in real application because the defects existing in the material are quite complex in terms of form and property.Also,the p-type doping of ZnO is well-known to be extremely hard.As a result,more and more recent works have shown that the properties of the ZnO material are of high-possibility to be determined by the defects in ZnO.For instance,in p-type doped ZnO,free holes could be a result of complex defects rather than the anticipated dopants.Therefore,it is quite important to investigate the forms,properties,and control of various defects in ZnO.In this article,we will discuss the properties and control of various intrinsic and extrinsic defects in ZnO by reviewing the recent progress on related studies.Firstly,the formation,form,and control technique of the zinc interstitial related donors will be discussed.It is shown that the zinc interstitial related defect is an important compensating source to holes in nitrogen-doped ZnO material.The defects could be identified and tracked quantitively by a combination of a batch of characterization methods,such as electron paramagnetic resonance,X-ray photoelectron spectroscopy,and Raman backscattering spectroscopy.The defects could be controlled by appropriately setting the condition of growth and/or post thermal treatment.Secondly,the main origin of possible acceptors in nitrogen-doped ZnO material has been pointed out.Intrinsic vacancies in combination with the extrinsic dopants,nitrogen,could be possible acceptors with shallow activation energy.Meanwhile,zinc vacancy small clusters could also be a candidate responsible for the shallow states of acceptors in ZnO.Moreover,novel complex acceptors as proposed by first-principles theoretical calculations have been experimentally introduced and realized.Under O-rich condition during nitrogen doping of Z

关 键 词：氧化锌 氮掺杂 本征缺陷 P型掺杂 光探测器 

分 类 号：TQ132.41[化学工程—无机化工] TB383.1[一般工业技术—材料科学与工程] TN304[电子电信—物理电子学]