溅射功率对磁控溅射法制备MgF2薄膜组织和性能的影响  

Sputtering Power on the Microstructure and Properties of MgF2 Thin Films Prepared with Magnetron Sputtering

作　　者：赵长江 马超[1,2] 刘俊成 刘治钢[3] 陈燕[3] ZHAO Changjiang;MA Chao;LIU Juncheng;LIU Zhigang;CHEN Yan(School of Materials Science and Engineering,Tiangong University,Tianjin 300387,China;State Key Laboratory of Membrane Separation and Membrane Process,Tiangong University,Tianjin 300387,China;Beijing Institute of Spacecraft System Engineering,Beijing 100086,China)

机构地区：[1]天津工业大学材料科学与工程学院,天津300387 [2]天津工业大学分离膜材料与膜过程国家重点实验室,天津300387 [3]北京空间飞行器总体设计部,北京100086

出　　处：《无机材料学报》2020年第9期1064-1070,共7页Journal of Inorganic Materials

基　　金：National Natural Science Foundation of China(51352002)。

摘　　要：为了减少磁控溅射法沉积MgF2薄膜的F贫乏缺陷,在工作气体Ar2中加入SF6作为反应气体,在石英玻璃衬底上用射频磁控溅射法制备了MgF2薄膜,研究了溅射功率对MgF2薄膜化学成分、微观结构和光学性能的影响。结果表明,随着溅射功率从115 W增加到220 W,F:Mg的原子比不断增加,185 W时达到2.02,最接近理想化学计量比2:1;薄膜的结晶度先提高后降低,最后转变为非晶态;MgF2薄膜的颗粒尺寸先是有所增加,轮廓也变得更加清晰,最后又变得模糊。MgF2薄膜的折射率先减小后增大,在185 W时获得最低值,550 nm波长的折射率1.384非常接近MgF2块体晶体;镀膜玻璃在300~1100 nm范围内的透光率(以下简称薄膜透光率)先增大后减小,185 W时达到94.99%,比玻璃基底的透光率高出1.79%。To reduce the F deficiency defect in MgF2 thin films deposited with magnetron sputtering,SF6 was added to the working gas Ar2 as the reactive gas,and MgF2 thin films were prepared on quartz glass substrates with radio frequency(RF)magnetron sputtering.The effects of sputtering power on the chemical compositions,microstructure and optical properties of MgF2 thin film were investigated.The results show that with sputtering power increase from 115 to 220 W,the atomic ratio of F to Mg increased continuously,and reached 2.02 at 185 W,close to ideal stoichiometric ratio of 2:1.The crystallinity of MgF2 film improved first,then decreased,and finally changed into amorphous state.Profile of particles composing MgF2 film became clearer at first,and finally became blurred.Refractive index of MgF2 film decreased firstly and then increased,and got the lowest value at 185 W,1.384 at 550 nm wavelength which is very close to that of MgF2 bulk crystal.The integral transmittance of the coated glass within 300–1100 nm(hereinafter referred to as the transmittance of the thin film)increased first and then decreased,and reached 94.99%at 185 W,higher than that of the bare glass substrate by 1.79%.

关 键 词：MgF2薄膜 F贫乏 透光率 减反射 溅射功率 磁控溅射 

分 类 号：TB383[一般工业技术—材料科学与工程] TM914[电气工程—电力电子与电力传动]