偏置条件对国产SiGe BiCMOS器件总电离辐射效应的影响  

Influence of total ionizing dose effects on domestic SiGe BiCMOS under different bias conditions

作　　者：王利斌 王信[2,3] 吴雪[4] 李小龙[2,3] 刘默寒 陆妩[1,2,3] WANG Libin;WANG Xin;WU Xue;LI Xiaolong;LIU Mohan;LU Wu(School of Physical Science and Technology,Xinjiang University,Urumqi 830046,China;Key Laboratory of Special Environmental Functional Materials and Devices,Xinjiang Institute of Physics and Chemistry,Chinese Academy of Sciences,Urumqi 830011,China;Xinjiang Key Laboratory of Electronic Information Materials and Devices,Urumqi 830011,China;Science and Technology on Analog Integrated Circuit Laboratory,Chongqing 400060,China)

机构地区：[1]新疆大学物理科学与技术学院,乌鲁木齐830046 [2]中国科学院新疆理化技术研究所中国科学院特殊环境功能材料与器件重点实验室,乌鲁木齐830011 [3]新疆电子信息材料与器件重点实验室,乌鲁木齐830011 [4]模拟集成电路重点实验室,重庆400060

出　　处：《辐射研究与辐射工艺学报》2020年第5期60-66,共7页Journal of Radiation Research and Radiation Processing

基　　金：模拟集成电路重点实验室稳定支持项目(JCKY2019210C055);自治区天池博士计划项目(新科证字[2018]111号);西部之光(2018-XBQNXZ-B-003)资助。

摘　　要：本文研究了1 Gy(Si)/s的高剂量率辐照下,偏置条件对国产0.35μm SiGe BiCMOS工艺器件电离总剂量(Total ionizing dose,TID)辐射效应的影响。结果表明:高剂量率辐照下,国产SiGe BiCMOS器件具有非常好的抗电离总剂量效应能力,可以达到数十千戈瑞,基极电流对辐射更敏感。不同偏置条件下,器件TID累积到12 kGy(Si)时,反偏损伤最大,零偏次之,正偏增益退化最小。发现其主要机制是高剂量率辐射及外加偏置引入的边缘电场影响氧化层中诱导氧化物陷阱电荷和界面态产生,导致基极辐射敏感区增大,基极电流增大,从而使器件增益减小。This paper evaluates the effects of the total ionizing dose(TID)radiation 0.35μm domestic SiGe BiCMOS devices under different bias conditions.60Co gamma irradiation was performed at a high dose rate of 1 Gy(Si)/s.The results show that the SiGe BiCMOS devices enable excellent tolerance to total ionizing effect,reaching multi-kGy(Si)total ionizing dose tolerance,and the base currents are more sensitive to radiation.Under different bias conditions,when the total dose accumulated to 12 kGy(Si),the reverse bias irradiated damage is the largest,followed by the zero bias,and the forward bias irradiation presents minimum damage.We found that the main mechanism of TID is that the high dose rate radiation and the edge electric field introduced by the bias conditions influences the oxide trap charges and interface state generation in the oxide layer,which leads to an increase in the radiation sensitive zone of the base pole and an increase in the base current,thus reducing the current gain of the device.

关 键 词：SIGE BICMOS 偏置条件 电离总剂量 氧化物陷阱电荷 界面态 

分 类 号：O774[理学—晶体学]