基于SOI的压电薄膜式水听器  

Piezoelectric Thin Film Hydrophone Based on SOI

作　　者：王强[1] 杨婷婷 赵龙[1] 薛小斌 臧俊斌[1] 张增星[1] 薛晨阳[1] Wang Qiang;Yang Tingting;Zhao Long;Xue Xiaobin;Zang Junbin;Zhang Zengxing;Xue Chenyang(Key Laboratory of Instrumentation Science and Dynamic Measurement of Ministry of Education,North University of China,Taiyuan 030051,China)

机构地区：[1]中北大学仪器科学与动态测试教育部重点实验室,太原030051

出　　处：《微纳电子技术》2020年第10期787-792,共6页Micronanoelectronic Technology

基　　金：国家自然基金委重大科研仪器项目(61727806)。

摘　　要：针对目前压阻式水听器在工作时需要外加电源、对温度敏感以及制造过程复杂的问题,提出了一种以AlN为压电材料的压电薄膜式水听器。该水听器由带有上下电极的压电薄膜以及绝缘体上硅(SOI)衬底组成。根据理论计算和有限元仿真分析对水听器的结构参数进行了优化以满足其对水下低频声信号的探测需求,并对所设计的水听器进行了微纳尺度下的一体化加工。对所制造的水听器进行了形貌测试,并用激光多普勒测振仪测试了水听器的谐振频率,实验测得的谐振频率为0.516 MHz,与理论计算值0.531 MHz非常接近,验证了理论分析的正确性,为压电水听器的研究与应用提供了一定的参考价值。For the problems of current piezoresistive hydrophones with external power supply in operation,sensitivity to temperature and complicated manufacturing process,apiezoelectric thin film hydrophone with AlN as piezoelectric material was proposed.The hydrophone consists of a piezoelectric film with top and bottom electrodes and silicon-on-insulator(SOI)substrate.According to the theoretical calculation and finite element simulation analysis,the structural parameters of the hydrophone were optimized to meet the detection requirements of underwater lowfrequency acoustic signal.The integrated processing of the designed hydrophone was carried out in micro-nano scale.The morphology of the manufactured hydrophone was tested and the resonance frequency of the hydrophone was tested with a laser Doppler vibrometer.The measured resonant frequency is 0.516 MHz,which is very close to the theoretical value of 0.531 MHz,verifying the correctness of the theoretical analysis and providing a certain reference value for the research and application of piezoelectric hydrophones.

关 键 词：压电水听器 微电子机械系统(MEMS) ALN 微纳尺度 绝缘体上硅(SOI) 

分 类 号：TB565.1[交通运输工程—水声工程]