混合集成电路内键合失效模式及机理分析  

Failure Model and Mechanism Analysis of Wire Bonding in Hybrid Integrated Circuit

作　　者：江国栋[1] 汪张超[1] 何超 吕红杰 JIANG Guo-dong;WANG Zhang-chao;HE Chao;LV Hong-jie(No.43 Research Institute of CETC,Hefei 230088,China)

机构地区：[1]中国电子科技集团公司第四十三研究所,安徽合肥230088

出　　处：《混合微电子技术》2019年第4期83-88,共6页Hybrid Microelectronics Technology

摘　　要：整机小型化的发展对混合集成电路提出了更高的可靠性要求。本文通过对典型案例的介绍,阐述了混合集成电路键合失效机理、预防措施,以及键合退化失效的寿命评估方法。With the development of miniaturization,more high reliability requirement is proposed for the Hybrid Integrated Circuit.This paper analyzed the wire bonding failure by typical FA cases.The failure mechanisms and preventive measures of wire bonding in hybrid integrated circuit,the corresponding methods of life evolution are introduced.

关 键 词：键合工艺 混合集成电路 键合失效 

分 类 号：TN45[电子电信—微电子学与固体电子学] TN406