直流磁控溅射制备锐钛矿TiO2薄膜生长速率的研究及其在多层膜制备中的应用  

Study on Depositing Rate of the Anatase TiO Thin Film Preparated by the Direct Current Magnetron Sputtering Technique and Its Application in the Fabricating of Multilayer Films

作　　者：王朝勇 李伟 王凯宏 李宗泽 刘志清 余晨生 王新练 王小妮 吴昊 马培芳 WANG Zhao-yong;LI Wei;WANG Kai-hong;LI Zong-ze;LIU Zhi-qing;YU Chen-sheng;WANG Xin-lian;WANG Xiao-ni;WU Hao;MA Pei-fang(Henan Provincial Engineering Laboratory of Building-Photovoltaics,Pingdingshan 467036,China;Institute of Sciences of Henan University of Urban Construction,Pingdingshan 467036,China;School of Physical Engineering and Laboratory of Material Physics,Zhengzhou University,Zhengzhou 450052,China;Pingding Shan Institute of Agricultural Sciences,Pingdingshan 467036,China)

机构地区：[1]河南城建学院数理学院,河南平顶山467046 [2]建筑光伏一体化技术河南省工程实验室,河南平顶山467046 [3]郑州大学物理工程学院,河南郑州450052 [4]平顶山市农业科学院,河南平顶山467001

出　　处：《真空》2020年第5期19-23,共5页Vacuum

基　　金：河南省科技攻关项目(172102210106,152102210038);平顶山市科技合作项目(2017009(9.5));河南城建学院2018年青年骨干教师项目。

摘　　要：利用直流磁控溅射技术(DCMS)制备锐钛矿TiO2薄膜,研究了工艺参数中的衬底温度、压强和溅射功率对TiO2薄膜的沉积速率的影响,利用场发射扫描电镜(FESEM)、X射线衍射仪(XRD)和椭圆偏振光测试仪表征了样品的表面形貌、结构和膜厚,实验结果表明:利用DMS制备薄膜为单一的的锐钛矿结构,表面组成颗粒均匀。随着沉积温度的增加,薄膜的沉积速率从100℃的2.16nm/min增加至400℃的4.03nm/min;压强增加,薄膜的沉积速率降低,0.75Pa、1.5Pa和3.0Pa条件下的沉积速率分别为4.48nm/min、3.18nm/min和2.42nm/min;溅射功率增加,沉积速率提高,100W、295W和443W对应的沉积速率分别为2.95nm/min、3.18nm/min和7.50nm/min。最后用TFC膜系设计软件在玻璃基底上设计了双层TiO2薄膜,利用设计结果制备了薄膜,实验值和理论设计结果非常吻合。Anatase TiO2 thin films were fabricated by DC magnetron sputtering technology(DCMS). The effects of the substrate temperature, pressure and sputtering power on the deposition rate of TiO2 films were studied. The surface morphology, structure and film thickness of the samples were characterized by field emission scanning electron microscopy(FESEM), X-ray diffractometer(XRD)and elliptical polarizer. The experimental results showed that the thin film was prepared as the single anatase phase and the surface is uniform. With the increase of the deposition temperature, the deposition rate of the thin film increased from 2.16 nm/min to 4.03 nm/min at the temperature from 100℃ to 400℃;The depositing rate decreased when the pressure increased. The deposition rates at the conditions of 0.75 PA, 1.5 Pa and 3.0 Pa are 4.48 nm/min, 3.18 nm/min and 2.42 nm/min, respectively;The depositing rate increased as the sputtering power increased. The deposition rates corresponding to 100 W, 295 W, and 443 W were 2.95 nm/min, 3.18 nm/min, and7.50 nm/min, respectively. In the end, double-layer TiO2 film was designed on the glass substrate using the TFC film system design software. The film was prepared on the ground of results. The experimental value and the theoretical design results are very consistent.

关 键 词：磁控溅射 锐钛矿TIO2 溅射速率 椭偏法 

分 类 号：O469[理学—凝聚态物理] TB43[理学—电子物理学]