AlGaN/GaN高电子迁移率晶体管器件中子位移损伤效应及机理  

Neutron-induced displacement damage effect and mechanism of AlGaN/GaN high electron mobility transistor

作　　者：郝蕊静 郭红霞[1,2,3] 潘霄宇 吕玲 雷志锋[2] 李波[1] 钟向丽[1] 欧阳晓平[1,3] 董世剑[1] Hao Rui-Jing;Guo Hong-Xia;Pan Xiao-Yu;LüLing;Lei Zhi-Feng;Li Bo;Zhong Xiang-Li;Ouyang Xiao-Ping;Dong Shi-Jian(School of Material Science and Engineering,Xiangtan University,Xiangtan 411105,China;Science and Technology on Reliability Physics and Application of Electronic Component Laboratory,China Electronic Product Reliability and Environmental Testing Research Institute,Guangzhou 510610,China;Northwest Institute of Nuclear Technology,Xi’an 710024,China;Key Lab of Wide Bandgap Semiconductor Material and Devices,School of Microelectronics,Xi’an University,Xi’an 710071,China)

机构地区：[1]湘潭大学材料与工程学院,湘潭411105 [2]工业和信息化部电子第五研究所,电子元器件可靠性物理及其应用技术国家重点实验室,广州510610 [3]西北核技术研究院,西安710024 [4]西安电子科技大学微电子学院,宽禁带半导体材料与器件教育部重点实验室,西安710071

出　　处：《物理学报》2020年第20期302-309,共8页Acta Physica Sinica

摘　　要：针对AlGaN/GaN高电子迁移率晶体管器件和异质结构在西安脉冲反应堆上开展了中子位移损伤效应研究,等效1 MeV中子注量为1×1014 n/cm^2.测量了器件在中子辐照前后的直流特性和1/f噪声特性,并对测试结果进行理论分析,结果表明:中子辐照在器件内引入体缺陷,沟道处的体缺陷通过俘获电子和散射电子,造成器件电学性能退化,主要表现为阈值电压正漂、输出饱和漏电流减小以及栅极泄漏电流增大.经过低频噪声的测试计算得到,中子辐照前后,器件沟道处的缺陷密度由1.78×1012 cm^-3·eV^-1增大到了1.66×10^14 cm^-3·eV^-1.采用C-V测试手段对肖特基异质结进行测试分析,发现沟道载流子浓度在辐照后有明显降低,且平带电压也正向漂移.分析认为中子辐照器件后,在沟道处产生了大量缺陷,这些缺陷会影响沟道载流子的浓度和迁移率,进而影响器件的电学性能.In this paper,neutron-induced displacement damage effects of AlGaN/GaN High electron mobility ransistor(HEMT)device and heterostructure on the Xi’an pulse reactor are studied.The equivalent 1 MeV neutron fluence is 1×1014 n/cm2.The direct-current characteristics and low frequency noise characteristics of the HEMT deviceare used to characterize the performances before and after being irradiated by the neutrons,and then the experimental results are analyzed theoretically.The analysis results showed that the displacement damage effect caused by the neutron irradiation will introduce the bulk defects into the device.The bulk defects at the channel cause the electrical performance of the device to degrade through trapping electrons and scattering electrons,which are mainly manifested as the drift of positive threshold voltage,the decrease of output saturation drain current,and the increase of gate leakage current.In order to further confirm the effect of neutron irradiation on the defect density of the device,we implement the low-frequency noise test and the calculation of the device,and the results show that the defect density at the channel of the device increases from 1.78×10^12 cm^-3·eV^-1 to 1.66×10^14 cm^-3·eV^-1,which is consistent with the results of the electrical characteristics test,indicating that the new defects introduced by neutron irradiation do degrade the electrical performance of the device.At the same time,the capacitor-voltage test is also carried out to analyze the Schottky heterojunctions before and after neutron irradiation.It is found that the channel carrier concentration is significantly reduced after irradiation,and the flat band voltage also drifts positively.The analysis shows that after irradiating the device with neutrons,a large number of defects will be generated in the channel,and these defects will affect the concentration and mobility of the channel carriers,which in turn will influence the electrical performance of the device.These experimental results can be used for desig

关 键 词：ALGAN/GAN 中子辐照 位移损伤 1/f噪声 

分 类 号：TN386[电子电信—物理电子学]