一种基于0.13μm SiGe BiCMOS工艺的Ka波段宽带有源移相器  

An Active Phase Shifter for Ka-Band Phased Arrays Based On 0.13-μm SiGe BiCMOS Process

作　　者：袁刚 郭宽田 周小川 叶力群 范超 田泽[4,5] 耿莉 桂小琰[1,2] YUAN Gang;GUO Kuantian;ZHOU Xiaochuan;YE Liqun;FAN Chao;TIAN Ze;GENG Li;GUI Xiaoyan(School of Microelectronic,Xi’an Jiaotong University,Xi'an 710049,P.R.China;Guangdong Xi’an Jiaotong University Academy,Foshan Guangdong 528000,P.R.China;Chengdu Corpro Technology Co.,Ltd,Chengdu,P.R.China;AVIC Computing Technology Research Institute,Xi'an 710049,610000,P.R.China;Aviation Key Laboratory of Science and Technology on Integrated Circuit and Microsystems Design,Xi'an 710049,P.R.China)

机构地区：[1]西安交通大学微电子学院,西安710049 [2]广东顺德西安交通大学研究院,广东佛山528000 [3]成都振芯科技股份有限公司,成都610000 [4]航空工业西安航空计算技术研究所,西安710019 [5]集成电路与微系统设计航空科技重点实验室,西安710049

出　　处：《微电子学》2020年第5期615-620,共6页Microelectronics

基　　金：广东省基础与应用基础研究基金资助项目(2020A1515010001);航空科学基金资助项目(20184370006)。

摘　　要：采用0.13μm SiGe BiCMOS工艺,设计了一种工作在32~38 GHz的Ka波段有源移相器,采用矢量合成的方法实现移相功能。该移相器电路包括输入无源巴伦、多相滤波网络、矢量合成单元、射随器和输出有源巴伦。后仿结果表明,输入输出反射系数均小于-9.5 dB,反向隔离度小于-80 dB,插入损耗优于-6.5 dB。在-55℃~125℃宽温范围内相对相移最大误差小于2.2°,全频带RMS移相误差小于1.5°,RMS增益误差小于0.35 dB。总功耗为18.2 mW,芯片核心面积为0.21 mm^2。An active phase shifter based on vector-sum technique for the frequency band from 32 GHz to 38 GHz was designed in a 0.13-μm SiGe BiCMOS process.Passive balun,poly-phase filter,vector-sum cell,buffer and active balun were included in the proposed phase shifter.Simulation results showed that S11 and S22 were better than-9.5 dB,S12 was better than-80 dB,and S21 was less than-6.5 dB.The maximum relative phase error was less than 2.2°,and the RMS phase error was less than 1.5°within a wide temperature range from-55℃to 125℃.The RMS gain error was better than 0.35 dB.The total power consumption was 18.2 mW with a core chip size of 0.21 mm^2.

关 键 词：有源移相器 矢量合成 多相滤波网络 BICMOS工艺 宽温 

分 类 号：TN623[电子电信—电路与系统] TN433