一种具有鳍状阳极的垂直GaN功率二极管  

A Vertical GaN Power Diode with Fin-Shaped Anode

作　　者：欧阳东法 杨超[1] 孙涛[1] 邓思宇 魏杰[1] 张波[1] 罗小蓉[1] OUYANG Dongfa;YANG Chao;SUN Tao;DENG Siyu;WEI Jie;ZHANG Bo;LUO Xiaorong(The School of Elec.Sci.and Engineer.,Univ.of Elec.Sci.and Technol.of China,Chengdu 611731,P.R.China)

机构地区：[1]电子科技大学电子科学与工程学院,成都611731

出　　处：《微电子学》2020年第5期688-693,共6页Microelectronics

基　　金：国家自然科学基金资助项目(51677021,61874149);科工局基础性科研院所稳定支持项目(1902N261)。

摘　　要：针对垂直GaN肖特基二极管击穿电压低、泄漏电流大等问题,提出了一种具有鳍状(Fin)阳极结构的高压垂直GaN功率二极管。该结构利用阳极金属与GaN半导体之间的功函数差耗尽二极管阳极与阴极之间的导电沟道,实现二极管关断及反向耐压的功能,因此,阳极不再需要进行肖特基接触,仅需欧姆接触即可。通过优化Fin阳极结构参数,新结构同时实现高击穿电压和低正向导通压降,该器件的击穿电压为1791 V(@1×10^-4 A/cm^2),正向导通压降为0.815 V(@100 A/cm^2),导通电阻仅为0.73 mΩ·cm^2且具有高的温度稳定性,开态电流摆幅高达1×1012量级。Vertical GaN Schottky barrier diodes(SBD)were usually confronted with relatively high reverse leakage current,which could lead to premature breakdown.Therefore,a vertical GaN power diode with fin-shaped anode was proposed.At zero bias,the electrons in the fin channel of the vertical GaN power diode were depleted due to the work function difference between the anode metal and GaN,which could realize the rectifying function without Schottky contact.By optimizing device parameters,the proposed new structure could achieve both high breakdown voltage of 1791 V(@1×10-4 A/cm^2)and low forward voltage drop of 0.815 V(@100 A/cm^2).It also exhibited well-behaved ON-state characteristics,including a ultralow differential specific ON-resistance of 0.73 mΩ·cm^2 with enhanced high-temperature stability and a high forward current density over kA/cm^2 with current swing of 12 orders of magnitude.

关 键 词：氮化镓 功率二极管 鳍状阳极 垂直器件 

分 类 号：TN311.7[电子电信—物理电子学]