Al液滴在GaAs表面的熟化行为研究  

Ripening Behavior of Al Droplet on GaAs Surface

作　　者：李耳士 黄延彬 郭祥 王一[1,2,3] 罗子江 李志宏 蒋冲[1,2,3] 丁召 LI Ershi;HUANG Yanbin;GUO Xiang;WANG Yi;LUO Zijiang;LI Zhihong;JIANG Chong;DING Zhao(College of Big Data and Information Engineering, Guizhou University, Guiyang 550025, China;Power Semiconductor Device Reliability Center of the Ministry of Education, Guiyang 550025, China;Key Laboratory of Micro-Nano-Electronics of Guizhou Province, Guiyang 550025, China;School of Education Administrations, Guizhou University of Finance and Economics, Guiyang 550025, China)

机构地区：[1]贵州大学大数据与信息工程学院,贵阳550025 [2]半导体功率器件可靠性教育部工程研究中心,贵阳550025 [3]贵州省微纳电子与软件技术重点实验室,贵阳550025 [4]贵州财经大学信息学院,贵阳550025

出　　处：《人工晶体学报》2020年第10期1819-1824,共6页Journal of Synthetic Crystals

基　　金：国家自然科学基金(61564002,11664005,61604046);贵州省科学技术基金(黔科合基础[2017]1055)。

摘　　要：为探究Al液滴在GaAs表面的熟化行为,利用液滴外延法在GaAs衬底表面制备Al液滴。在零As压环境下,通过控制退火时间有效控制Al液滴的生长、成核。结合热力学原理和晶体生长理论对样品形貌变化现象进行物理解释,构建出液滴形貌变化过程中熟化、刻蚀和扩散行为的基本模型。理论计算表明,液滴在熟化行为达到退火239 s的平衡点后,被向下刻蚀和向外扩散两个行为同时消耗。To investigate the ripening behavior of Al droplets on GaAs surface,Al droplets were prepared onto GaAs substrates by droplet epitaxy.The growth and nucleation of Al droplets were effectively controlled by controlling the annealing time without arsenic pressure.By combining thermodynamic principles and crystal growth theories,physical explanation of the different sample morphology and constructed the basic models about ripening,etching and diffusion behaviors during the process of droplets morphology transition were carried out.The calculation results confirm that the droplet will be consumed by etching and diffusion process simultaneously when the ripening behavior reaches the equilibrium state after annealing of 239 s.

关 键 词：铝液滴 熟化 形貌 液滴外延 

分 类 号：O472[理学—半导体物理]