环境因素对锗单晶抛光片表面质量的影响  

Effects of Environmental Factors on Surface Quality of Germanium Single Crystal Polished Wafers

作　　者：杨洪星[1] 王雄龙[1] 索开南[1] 杨静[1] 陈晨[1] Yang Hongxing;Wang Xionglong;Suo Kainan;Yang Jing;Chen Chen(The 46 th Research Institute,CETC,Tianjin 300220,China)

机构地区：[1]中国电子科技集团公司第四十六研究所,天津300220

出　　处：《半导体技术》2020年第11期880-885,共6页Semiconductor Technology

摘　　要：由于Ge材料具有较为活泼的化学性质,易与环境中的氧化剂发生化学反应,使Ge单晶抛光片表面质量因表面化学组成的变化而出现恶化,降低交付可靠性。通过实验验证了在氧化性氛围中,Ge单晶抛光片表面易产生雾,且随着时间延长而逐渐增多,直至表面完全被覆盖。从反应机理分析了Ge单晶抛光片表面可能发生的化学反应。通过X射线光电子能谱(XPS)验证了Ge单晶抛光片表面的价态发生了变化,发现Ge单晶抛光片表面发生了氧化反应。从环境因素入手,分析了净化等级和化学氛围对Ge单晶抛光片表面质量的影响,确定了Ge单晶抛光片的存放环境,保证了Ge单晶抛光片的交付可靠性。Due to the relatively active chemical properties of Ge materials, they are easy to react with oxidants in the environment, which makes the surface quality of the Ge single crystal polished wafer deteriorate due to the change of surface chemical composition and reduces the delivery reliability. It is verified by experiments that the Ge single crystal polished wafer surface is prone to produce haze in the oxidation atmosphere and the haze increases with time, until the whole surface is completely covered with haze. The possible chemical reaction taken on the Ge single crystal polished wafer surface was analyzed from the reaction mechanism. It is verified by the X-ray photoelectron spectroscopy(XPS) that the valence state of the Ge single crystal polished wafer surface has changed, and it can be seen that oxidation reaction occurs on the Ge single crystal polished wafer surface. The influences of the cleanliness level and chemical ambience on the surface quality of the Ge single crystal polished wafer were analyzed, and the storage environment of the Ge single crystal polished wafer was determined to guarantee the delivery reliability of the Ge single crystal polished wafer.

关 键 词：Ge 抛光片 净化等级 化学气氛 表面质量 

分 类 号：TN304.11[电子电信—物理电子学] TN305.2