Comprehensive study of crystalline AlN/sapphire templates after high-temperature annealing with various sputtering conditions  

作　　者：Wen Gu Zhibin Liu Yanan Guo Xiaodong Wang Xiaolong Jia Xingfang Liu Yiping Zeng Junxi Wang Jinmin Li Jianchang Yan 

机构地区：[1]Research and Development Center for Solid-State Lighting,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China [2]Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China [3]Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application,Beijing 100083,China [4]Advanced Ultraviolet Optoelectronics Co.Ltd,Changzhi 046000,China [5]Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China [6]Youwill Hitech Co.Ltd,Beijing 100083,China

出　　处：《Journal of Semiconductors》2020年第12期94-100,共7页半导体学报（英文版）

基　　金：This work was supported by the National Key R&D Program of China(Nos.2016YFB0400800 and 2017YFB0404202);the National Natural Sciences Foundation of China(Grant Nos.61527814,61674147,61904176,U1505253);Beijing Nova Program Z181100006218007;Youth Innovation Promotion Association CAS 2017157.

摘　　要：High-quality AlN/sapphire templates were fabricated by the combination of sputtering and high-temperature(HT)annealing.The influence of sputtering parameters including nitrogen flux,radio frequency power,and substrate temperature on the crystalline quality and surface morphology of annealed AlN films were investigated.With lower substrate temperature,lower power,and lower N2 flux,the full width at half maximum of the X-ray rocking curve for AlN(0002)and(102)were improved to 97.2 and 259.2 arcsec after high-temperature annealing.This happens because the increased vacancy concentration of sputtered AlN films can facilitate the annihilation of dislocations by increasing the recovery rate during HT annealing.Step and step-bunching morphologies were clearly observed with optimized sputtering conditions.

关 键 词：SPUTTER ANNEALING ALN dislocation density 

分 类 号：TN312.8[电子电信—物理电子学]