GaN HEMT器件的AlN缓冲层MOCVD外延生长研究  

Research into MOCVD Extended Growth of AlN Buffer Layer in GaN HEMT Device

作　　者：倪洪亮 吴金星[2] NI Hong-liang;WU Jin-xing(Institute of CSIC,Yangzhou 225101,China;Xidian University,X i’an 710071,China)

机构地区：[1]中国船舶重工集团公司第七二三研究所,江苏扬州225101 [2]西安电子科技大学,陕西西安710071

出　　处：《舰船电子对抗》2020年第5期116-120,共5页Shipboard Electronic Countermeasure

摘　　要：探讨了GaN高电子迁移率晶体管(HEMT)器件的基础——AlN缓冲层的制备,运用金属有机化学气相沉淀(MOCVD)技术,采用脉冲原子层外延(PALE)和传统连续生长相结合的方法,在提高AlN缓冲层生长速度的同时改善晶体的质量。采用优化后的生长工艺,降低了AlN模板的半高宽,有效改善了缓冲层的晶体质量和表面形貌,为后续高性能GaN HEMT器件的外延结构制备打下了基础。This paper discusses the preparation of AlN buffer layer,which is the basis of GaN high electron mobility transistor(HEMT)device.The pulsed atom layer epitaxy(PALE)and traditional continuous growth method are used to improve the crystal quality while increasing the growth rate of AlN buffer layer by using metal-organic chemical vapor deposition(MOCVD)technology.The optimized growth process reduces the half height and width of AlN template,and improves the crystal quality and surface morphology of buffer layer effectively.It lays a foundation for the epitaxial structure preparation of subsequent high performance GaN HEMT devices.

关 键 词：GAN高电子迁移率晶体管 ALN缓冲层 金属有机化学气相沉淀 脉冲原子层外延 

分 类 号：TN386[电子电信—物理电子学]