氮化物宽禁带半导体的MOCVD大失配异质外延  

Large Lattice-Mismatched Heteroepitaxial Growth of Nitride Wide Bandgap Semiconductors by MOCVD

作　　者：沈波[1,2,3,4,5] 杨学林 许福军[1,2,3] SHEN Bo;YANG Xuelin;XU Fujun(Research Center for Wide Gap Semiconductors,Peking University,Beijing 100871,China;State Key Laboratory of Artificial Microstructure and Microscopic Physics,Peking University,Beijing 100871,China;School of Physics,Peking University,Beijing 100871,China;Collaborative Innovation Center of Quantum Matter,Beijing 100871,China;Nano-optoelectronics Frontier Center of Ministry of Education,Beijing 100871,China)

机构地区：[1]北京大学宽禁带半导体研究中心,北京100871 [2]北京大学人工微结构和介观物理国家重点实验室,北京100871 [3]北京大学物理学院,北京100871 [4]量子物质科学协同创新中心,北京100871 [5]教育部纳光电子前沿科学中心,北京100871

出　　处：《人工晶体学报》2020年第11期1953-1969,共17页Journal of Synthetic Crystals

基　　金：国家重点研发计划(2018YFE0125700,2016YFB0400100);国家自然科学基金(1634002,61521004,61927806)。

摘　　要：以氮化镓(GaN)、AlN(氮化铝)为代表的Ⅲ族氮化物宽禁带半导体是研制短波长光电子器件和高频、高功率电子器件的核心材料体系。由于缺少高质量、低成本的同质GaN和AlN衬底,氮化物半导体主要通过异质外延,特别是大失配异质外延来制备。由此导致的高缺陷密度、残余应力成为当前深紫外发光器件、功率电子器件等氮化物半导体器件发展的主要瓶颈,严重影响了材料和器件性能的提升。本文简要介绍了氮化物半导体金属有机化学气相沉积(MOCVD)大失配异质外延的发展历史,重点介绍了北京大学在蓝宝石衬底上AlN、高Al组分AlGaN的MOCVD外延生长和p型掺杂、Si衬底上GaN薄膜及其异质结构的外延生长和缺陷控制等方面的主要研究进展。最后对Ⅲ族氮化物宽禁带半导体MOCVD大失配异质外延的未来发展做了简要展望。Ⅲ-nitride wide bandgap semiconductors,such as gallium nitride(GaN)and aluminum nitride(AlN),are the key materials for the development of short-wavelength optoelectronic devices,as well as high-frequency and high-power electronic devices.Due to the lack of high-quality and low-cost homogeneous GaN and AlN substrates,nitride semiconductors are mainly realized by means of heteroepitaxy,especially the large lattice-mismatched heteroepitaxy,resulting in high defect density and huge residual stress in the epilayers,which have become the key bottlenecks in the development of deep ultraviolet light emitting devices and power electronic devices,and other nitride semiconductor ones.In this paper,the research history of the large lattice-mismatched heteroepitaxy of nitride semiconductors by means of metal organic chemical vapor deposition(MOCVD)is first briefly introduced.Then,the research progress on the MOCVD epitaxial growth and p-type doping of AlN and high Al composition AlGaN on sapphire substrate,as well as the MOCVD epitaxial growth and defect control of GaN and its heterostructures on Si substrate in Peking University are demenstrated.Finally,the current challenges and developing trends on the large lattice-mismatched heteroepitaxy forⅢ-nitride wide bandgap semiconductors are reviewed and expected.

关 键 词：氮化镓 氮化铝 金属有机化学气相沉积(MOCVD) 大失配异质外延 宽禁带半导体 

分 类 号：O484.1[理学—固体物理] TN36[理学—物理]