硅基上Si1-xGex合金的外延生长及性能研究  

Epitaxial Growth and Characterizations of Si1-xGex Alloys on Si Substrate

作　　者：袁紫媛 潘睿 夏顺吉 魏炼 叶佳佳 李晨[1] 陈延峰[1] 芦红 YUAN Ziyuan;PAN Rui;XIA Shunji;WEI Lian;YE Jiajia;LI Chen;CHEN Yanfeng;LU Hong(National Laboratory of Solid-State Microstructures&College of Engineering and Applied Sciences,Nanjing University,Nanjing 210093,China;Jiangsu Key Laboratory of Artificial Functional Materials,Nanjing 210023,China)

机构地区：[1]南京大学,固体微结构物理国家重点实验室&现代工程与应用科学学院,南京210093 [2]江苏省功能材料设计原理与应用技术重点实验室,南京210023

出　　处：《人工晶体学报》2020年第11期2178-2193,共16页Journal of Synthetic Crystals

基　　金：国家重点研发项目(2018YFA0306200,2017YFA0303702);国家自然科学基金重点项目(51732006,11890702,51721001)。

摘　　要：硅基上高质量的异质外延生长是实现高性能微电子器件的基础,本文通过低温分子束外延技术在Si衬底上实现了全组分的Si1-xGex(0<x≤1)薄膜的生长,并对Si1-xGex/Si异质结构的应力弛豫、热输运等方面展开了研究。运用低温外延和高温退火的方法实现了界面上位错的调控,获得了具有超高迁移率的Ge薄膜。此外,本文还介绍了硅基上Ge量子点的生长和调控。以上工作为大失配异质结构外延的理论研究和应用提供了新的思路和方法。High quality hetero-epitaxy is the key to realize high performance microelectronic devices.In this work,Si1-xGex(0<x≤1)films with a full spectrum of the Ge content x on Si substrates were successfully grown by low temperature molecular beam epitaxy,and the relaxation of the Si1-xGex/Si heterostructures and thermal transport properties were studied in detail.In addition,both low temperature epitaxy and high temperature annealing to modulate the misfit dislocations at the Ge/Si interface were utilized,and ultra high mobilities in the Ge films grown on Si were obtained.The growth and manipulation of the Ge quantum dots are also introduced in this work.All of the above-mentioned work can provide new ideas and pathways for both theoretical studies and device applications on hetero-epitaxy with a large lattice mismatch.

关 键 词：分子束外延 Si1-xGex合金 硅基锗 GE量子点 异质外延 界面调控 

分 类 号：TN34[电子电信—物理电子学]