PBTI stress-induced 1/f noise in n-channel FinFET  

作　　者：Dan-Yang Chen Jin-Shun Bi Kai Xi Gang Wang 陈丹旸;毕津顺;习凯;王刚(University of Chinese Academy of Sciences,Beijing 100049,China;Institute of Microelectronics of the Chinese Academy of Sciences,Beijing 100029,China;Semiconductor Manufacturing International Corporation,Shanghai 201203,China)

机构地区：[1]University of Chinese Academy of Sciences,Beijing 100049,China [2]Institute of Microelectronics of the Chinese Academy of Sciences,Beijing 100029,China [3]Semiconductor Manufacturing International Corporation,Shanghai 201203,China

出　　处：《Chinese Physics B》2020年第12期536-541,共6页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Grant No.61634008).

摘　　要：The influence of positive bias temperature instability(PBTI)on 1/f noise performance is systematically investigated on n-channel fin field-effect transistor(FinFET).The FinFET with long and short channel(L=240 nm,16 nm respectively)is characterized under PBTI stress from 0 s to 104 s.The 1/f noise features are analyzed by using the unified physical model taking into account the contributions from the carrier number and channel mobility fluctuations.The I d-V g,I d-V d,I g-V g tests are conducted to support and verify the physical analysis in the PBTI process.It is found that the influence of the channel mobility fluctuations may not be neglected.Due to the mobility degradation in a short-channel device,the noise level of the short channel device also degrades.Trapping and trap generation regimes of PBTI occur in high-k layer and are identified based on the results obtained for the gate leakage current and 1/f noise.

关 键 词：PBTI 1/f noise FINFET mobility fluctuation 

分 类 号：TN304.21[电子电信—物理电子学]