异质形核生长高效多晶硅研究  

High Efficiency Multi-crystalline Silicon Growth by Heterogeneous Nucleation

作　　者：陈欣文 黄俊 简学勇 李建敏[1,2,3] Chen Xin-wen;Huang Jun;Jian Xue-yong;Li Jian-min(JiangxiSaiwei LDK Solar High-tech Co.,Ltd.Jiangxi Xinyu 338000;Jiangxi Xinyu New Material Science and technology Institute,Jiangxi Xinyu 338000;National Photovoltaic Engineering Research Center,Jiangxi Xinyu 338000)

机构地区：[1]江西赛维LDK太阳能高科技有限公司,江西新余338000 [2]江西新余新材料科技研究院,江西新余338000 [3]国家光伏工程技术研究中心,江西新余338000

出　　处：《江西化工》2020年第6期95-98,共4页Jiangxi Chemical Industry

摘　　要：本文通过对多晶硅铸造全熔工艺异质形核理论的研究,选择优异的形核剂并制备良好的形核层,依靠涂层工艺的创新及铸锭工艺优化,确保全熔工艺下涂层内异质形核的可形核数,减小润湿角。结果显示,SiO2异质形核全熔工艺的多晶硅锭平均少子寿命达7.02μs,硅锭出材率达到66.21%,比半熔工艺硅片的电池光电转换效率略高。Based on the study of heterogeneous nucleation theory of multi-crystalline silicon casting full melting process,excellent nucleating agent is selected and good nucleation layer is prepared.Depending on the innovation of coating process and optimization of ingot casting process,the nucleation number of heterogeneous nucleation in the coating is ensured and the wetting angle is reduced.The results of SiO2 heterogeneous nucleation full melting process show that the average minority carrier life of polycrystalline silicon ingot is 7.02μs,and the yield of silicon ingot is 66.21%,and its solar cell conversion efficiency is slightly higher than that of half melting process.

关 键 词：异质形核 多晶硅 全熔工艺 少子寿命 硅锭出材率 电池效率 

分 类 号：TM914.41[电气工程—电力电子与电力传动]