活化过硫酸钾氧化法对提高钌CMP去除速率的作用  

Effect of activated potassium persulfate oxidation on improving removal rate of ruthenium during CMP

作　　者：王超 周建伟 王辰伟 张雪 WANG Chao;ZHOU Jianwei;WANG Chenwei;ZHANG Xue(School of Electronic and Information Engineering,Hebei University of Technology,Tianjin 300130,China;不详)

机构地区：[1]河北工业大学电子信息工程学院,天津300130 [2]天津市电子材料与器件重点实验室,天津300130

出　　处：《电镀与涂饰》2020年第23期1667-1670,共4页Electroplating & Finishing

基　　金：国家中长期科技发展规划02科技重大专项(2009ZX02308)。

摘　　要：针对Cu互连集成电路中新型阻挡层金属材料钌(Ru)在化学机械抛光(CMP)中去除速率低的问题,在SiO2–KIO4体系抛光液中研究了硫酸钾(K2SO4)、硝酸钾(KNO3)和过硫酸钾(K2S2O8)对钌去除速率的影响。结果表明,在钾离子浓度相同的条件下,3种钾盐都可以提高Ru的去除速率,其中K2S2O8的提升效果最明显,抛光后Ru的表面粗糙度也最小。Aiming at the problem of low removal rate of Ru,a new barrier metal material in Cu interconnect integrated circuits,during chemical mechanical polishing(CMP),the effects of K2SO4,KNO3,and K2S2O8 on the removal rate of Ru in a SiO2–KIO4 slurry were studied.The results showed that all of the three kinds of potassium salts could increase the removal rate of Ru at the same of concentration of potassium ions.K2S2O8 showed the most obvious effect in improving the removal rate,and the surface roughness of Ru was the lowest after CMP in the slurry with it.

关 键 词：钌 化学机械抛光 过硫酸钾 去除速率 表面粗糙度 

分 类 号：TG175[金属学及工艺—金属表面处理]