氮化镓基金属基板蓝光LED变温变电流性能  

Temperature and Current Dependence of Characteristics in GaN-based BlueLED on Metal Substrate

作　　者：汪延明 周智斌 廖富达 何鹏 周波 苗振林 季辉 WANG Yanming;ZHOU Zhibin;LIAO Fuda;HE Peng;ZHOU Bo;MIAO Zhenlin;JI Hui(Xiangneng Hualei Optoelectronic Corporation,Chenzhou 423038,China)

机构地区：[1]湘能华磊光电股份有限公司,郴州423038

出　　处：《材料导报》2020年第S02期48-51,共4页Materials Reports

基　　金：湖南省科技计划项目(2016WK2063);湖南省重点领域计划项目(2019GK2239)。

摘　　要：本工作将c面蓝宝石衬底上外延生长的GaN薄膜通过电镀及激光剥离的方法转移到金属基板上,并经过芯片制造获得垂直结构的LED发光器件,测试了该器件的变温变电流特性。结果表明:本样品具有良好的变温变电流性能,本研究将之归结于良好的晶体质量、金属基板良好的热导率及较合理的外延结构。GaN-based light-emitting diodes(LEDs)thin films were successfully transferred from the original c-sapphire substrate to metal substrate via electroplate and laser lift-off and then the vertical structure LEDs were fabricated.Temperature and current dependence of characteristics in these LEDs were tested.The result indicated that the samples had excellent characteristics depended on temperature and current.These excellent characteristics mostly possibly attributed to the high quality crystal,excellent heat conductivity of the mental substrate and the reasonable structure of epitaxy.

关 键 词：氮化镓 发光二极管 温度 电流 金属基板 

分 类 号：TN312.8[电子电信—物理电子学]