InGaAs纳米线雪崩焦平面探测器发展研究  

Progress of InGaAs nanowire avalanche focal plane detectors

作　　者：张伟[1] 徐强 谢修敏 邓杰[1] 覃文治[1] 胡卫英[1] 陈剑 宋海智[1,2] ZHANG Wei;XU Qiang;XIE Xiumin;DENG Jie;QIN Wenzhi;HU Weiying;CHEN Jian;SONG Haizhi(Southwest Institute of Technical Physics, Chengdu 610041, China;Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China)

机构地区：[1]西南技术物理研究所,成都610041 [2]电子科技大学基础与前沿科学研究所,成都610054

出　　处：《激光技术》2021年第1期105-108,共4页Laser Technology

基　　金：四川省科技计划资助项目(2018TZDZX0001);国家重点研发计划资助项目(2017YFB0405302)。

摘　　要：基于InGaAs纳米线的光电探测器,由于其优异的性能而受到广泛的关注和研究。综述了InGaAs纳米线光电探测器的探测机理、材料结构、器件性能和当前的研究现状。讨论了InGaAs纳米线雪崩焦平面探测器结构设计、纳米线材料精密生长、纳米线材料的界面与缺陷控制、纳米线雪崩焦平面器件制备工艺等关键技术。对发展高光子探测效率、低噪声、高增益InGaAs纳米线雪崩焦平面探测器的前景进行了展望。Photodetectors based on InGaAs nanowires have been widely studied due to their excellent properties.The detection mechanism,material structure,device performance and current research status of InGaAs nanowire photodetectors were reviewed.The key technologies,such as the structure design of InGaAs nanowire avalanche focal plane detector,the precise growth of nanowire materials,the interface and defect control of nanowire materials,and the preparation process of nanowire avalanche focal plane devices were discussed.On this basis,the prospect of developing high photon detection efficiency,low noise and high gain InGaAs nanowire avalanche focal plane detector was prospected.

关 键 词：传感器技术 雪崩焦平面探测器 InGaAs纳米线阵列 光电二极管 探测器 

分 类 号：O475[理学—半导体物理]