一种高PSRR高阶温度补偿的带隙基准电压源  

A High-PSRR High-Order Temperature Compensation Bandgap Voltage Reference

作　　者：周前能[1] 李文鸽 彭志强 关晶晶 李红娟[1] 唐政维[1] ZHOU Qianneng;LI Wenge;PENG Zhiqiang;GUAN Jingjing;LI Hongjuan;TANG Zhengwei(Depart.of Microelec.,College of Optoelec.Engineer.,Chongqing Univ.of Posts and Telecommun.,Chongqing 400065,P.R.China)

机构地区：[1]重庆邮电大学光电工程学院微电子系,重庆400065

出　　处：《微电子学》2020年第6期777-783,共7页Microelectronics

基　　金：重庆市自然科学基金资助项目(CSTC2016JCYJA0347);重庆市技术创新与应用示范项目(cstc2018jszx-cyztzx0049);重庆市重点产业共性关键技术创新专项项目(cstc2016zdcy-ztzx40004);重庆市重点产业共性关键技术创新专项重点研发项目(cstc2017zdcy-zdyfX0041)。

摘　　要：基于SMIC 0.18μm CMOS混合信号工艺,设计了一种高PSRR高阶温度补偿的带隙基准电压源(BGR)。采用温度曲率补偿技术和温度分段补偿技术,使该BGR获得低温漂特性。采用PSRR提升技术,使所设计的BGR获得高PSRR特性。仿真结果显示,当温度从-50℃到125℃变化时,该BGR的温漂系数为1.85×10^-6/℃,在频率为100 Hz、1 kHz、10 kHz时分别获得-88 dB、-83.6 dB、-65.8 dB的PSRR。A high-PSRR high-order temperature compensation bandgap voltage reference(BGR) was designed in SMIC 0.18 μm CMOS mixed-signal process. By adopting these technologies of temperature curvature-compensation and temperature piecewise-compensation, the designed BGR achieved a reference voltage with lower temperature drift coefficient. By adopting the power supply rejection ratio(PSRR) improvement technology, the designed BGR achieved the high-PSRR performance. Simulation results showed that the temperature coefficient of the designed BGR was only 1.85×10^-6/℃ in the temperature range from-50 ℃ to 125 ℃. The designed BGR achieved the PSRRs of-88 dB,-83.6 dB and-65.8 dB at 100 Hz, 1 kHz and 10 kHz respectively.

关 键 词：带隙基准电压源 曲率补偿电路 分段补偿电路 PSRR提升技术 

分 类 号：TN432[电子电信—微电子学与固体电子学]