SU-8光刻胶去胶工艺研究  

Research on SU-8 Photoresist Stripping Process

作　　者：张笛 王英[1] 瞿敏妮 孔路瑶 程秀兰 ZHANG Di;WANG Ying;QU Minni;KONG Luyao;CHENG Xiulan(Center for Advanced Electronic Materials and Devices,School of Electronic Information and Electrical Engineering,Shanghai Jiao Tong University,Shanghai 200240,P.R.China)

机构地区：[1]上海交通大学电子信息与电气工程学院先进电子材料与器件平台,上海200240

出　　处：《微电子学》2020年第6期910-913,共4页Microelectronics

基　　金：科技部重点专项(2016YFB0200205)。

摘　　要：SU-8光刻胶因具有良好的机械耐久性、聚合物水密性、介电性能、生物兼容性和抗化学腐蚀性而被广泛用于MEMS器件、生物医学和芯片封装等领域。现有制作工艺中,在不损伤器件的同时完全去除和剥离SU-8光刻胶仍是一个难题。文章研究了一种基于O2/CF4等离子刻蚀配合湿法刻蚀的去除方法,实现了SU-8光刻胶在硅基底、非晶无机非金属材料、电镀金属等材料上的有效去除。Su-8 photoresist has been widely used in MEMS devices, biomedicine and chip packaging because of its excellent mechanical durability, polymer watertightness, dielectric properties, biological compatibility and chemical corrosion resistance. It is still a difficult problem to completely remove and peel su-8 photoresist without damaging the device. In this paper, a removal method based on O2/CF4plasma etching combined with wet etching had been studied to achieve effective removal of Su-8 photoresist on silicon substrate, amorphous inorganic non-metallic material, electroplated metal and other materials.

关 键 词：SU-8光刻胶 O2/CF4 等离子刻蚀 去胶 

分 类 号：TN305.7[电子电信—物理电子学]