宽带隙半导体SiC表面态研究  

Study on Surface State of Wide Band-gap Semiconductor of SiC

作　　者：朱靖 黄玲琴 夏马力 谷晓钢 ZHU Jing;HUANG Lingqin;XIA Mali;GU Xiaogang(College of Electrical Engineering and Automation,Jiangsu Normal University,Xuzhou,Jiangsu,221000,CHN)

机构地区：[1]江苏师范大学电气工程及自动化学院,江苏徐州221000

出　　处：《固体电子学研究与进展》2020年第6期401-405,共5页Research & Progress of SSE

基　　金：国家自然科学基金资助项目(62074071,61604063)。

摘　　要：基于表面态在禁带中均匀分布和分立离散分布两种假设,对碳化硅表面态计算方法进行了研究。然后通过氢等离子体对n型4H-SiC表面特性进行调控,系统研究了SiC表面特性及表面态密度的变化。用X射线光电子能谱对表面成分及其化学位移分析,结果显示经氢等离子体处理后SiC表面碳、氧污染物明显降低,表面势下降约0.4 eV,这也被kelvin探针显微镜的测试所证实。结合两种表面态分布假设,氢等离子体处理后SiC表面非本征表面态密度下降至1011eV·cm-2量级。Based on assumptions that the surface states are constant and discrete as a single level in the band-gap,the calculation methods of surface states density of SiC were studied.Through modulating the surface properties by hydrogen plasma,the surface properties and surface states of n-type 4 HSiC were investigated systematically.The surface composition and chemical shift were analyzed by Xray photoelectron spectroscopy(XPS).It is found that the C and O contaminants on the surface can be reduced greatly after hydrogen pretreatment.The surface potential decreases about 0.4 eV,which is confirmed by the Kelvin probe microscopy(KPM)measurement.The calculated surface states density is reduced to be on the order of 1011 eV·cm-2 according to the two assumptions.

关 键 词：SIC 表面势 表面态 宽带隙 等离子体 

分 类 号：O485[理学—固体物理]