氮气流量对磁控溅射InN薄膜特性的影响  

Effects of nitrogen flow rate on properties of InN films by magnetron sputtering

作　　者：杨非凡 付宏远 樊义棒 任煜豪 李静杰 赵洋 甄志强 王辉 YANG Fei-Fan;FU Hong-Yuan;FAN Yi-Bang;REN Yu-Hao;LI Jing-Jie;ZHAO Yang;ZHEN Zhi-Qiang;WANG Hui(Henan Key Laboratory of Photoelectric Energy Storage Material and Applications,School of Physics and Engineering,Henan University of Science&Technology,Luoyang 471023,China)

机构地区：[1]河南科技大学物理工程学院河南省光电储能材料与应用重点实验室,洛阳471023

出　　处：《原子与分子物理学报》2021年第3期123-128,共6页Journal of Atomic and Molecular Physics

基　　金：国家自然科学基金(61674052,11404097);河南省高等学校重点科研项目(20A140012);河南省高校省级大学生创新创业训练计划(SRTP)(S201910464024);河南科技大学大学生研究训练计划(SRTP)(2019208);河南科技大学物理与工程学院大学生研究训练计划(SRTP)(wlsrtp201910)。

摘　　要：采用射频磁控溅射法在蓝宝石衬底上制备了InN薄膜.研究了N2流量对InN薄膜的晶体结构、表面形貌、光学和电学特性的影响.X射线衍射(XRD)测试结果显示,InN呈六方纤锌矿结构,具有明显(002)择优取向;SEM与AFM图像显示InN薄膜均匀致密,低N2流量下随流量增加,表面逐渐趋于光滑平整,过高的N2流量使薄膜生长方式发生改变;通过检测薄膜吸收特性,利用线性外推法计算禁带宽度为1.81~1.96 e V;电学测试结果表明,制备的薄膜样品均呈现n型导电特性,且迁移率较低,最大为12.2cm^(2)/v·s;载流子浓度较高,保持在10^(21)cm^(-3)数量级;电阻率较小,范围是0.202~0.33 mΩ·cm.InN films were prepared on sapphire substrate by RF magnetron sputtering. The effects of N2 flow rate on the crystal structure,surface morphology,optical and electrical properties of InN films were studied. The results of X-ray diffraction(XRD) showed that In N films have the structure of hexagonal wurtzite and obvious(002) preferred orientation. The SEM and AFM images showed that InN films are homogeneous and dense,and the surface gradually becomes smoother with the increase of the N2 flow rate at low nitrogen range. Moreover,the growth mode of the films would be changed if the N2 flow rate is high. By testing the absorption characteristics of the films,the bandgap energies of the InN films calculated by linear extrapolation are 1. 81 ~ 1. 96 eV. The electrical measurement results showed that the prepared InN films exhibit n-type conductivity. The mobilities are lower with the maximum of 12. 2 cm^(2)/v·s and the carrier concentrations are higher,which are kept at the 1021 cm^(-3) order of magnitude. The resistivities are smaller,ranged at 0. 202 ~ 0. 33 mΩ·cm.

关 键 词：磁控溅射 INN薄膜 氮气流量 原子排布 

分 类 号：O484.1[理学—固体物理]