量子阱带间跃迁探测器基础研究(特邀)  

Fundamental researches on the quantum well interband transition detector(Invited)

作　　者：岳琛 杨浩军 吴海燕 李阳锋 孙令[1,2] 邓震 杜春花 江洋 马紫光[1] 王文新[1] 贾海强 陈弘[1] Yue Chen;Yang Haojun;Wu Haiyan;Li Yangfeng;Sun Ling;Deng Zhen;Du Chunhua;Jiang Yang;Ma Ziguang;Wang Wenxin;Jia Haiqiang;Chen Hong(Key Laboratory for Renewable Energy,Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China;University of Chinese Academy of Sciences,Beijing 100049,China)

机构地区：[1]中国科学院物理研究所清洁能源重点实验室,北京100190 [2]中国科学院大学,北京100049

出　　处：《红外与激光工程》2021年第1期52-57,共6页Infrared and Laser Engineering

基　　金：国家自然科学基金(61991441,11574362,61210014,11374340,11474205);国家科技支撑计划(2016YFB0400302)。

摘　　要：在最近的实验中,PN结型量子阱结构被观察到反常的载流子输运情况,其相应的物理机制和载流子输运模型被提出。通过系统实验观察到,PN结量子阱结构材料在共振激发模式下,仍可测出开路电压或短路电流。对比开路和短路情况下的光致荧光(PL)光谱,发现短路下PL强度明显降低。这说明短路状态下的光生载流子没有被限制在量子阱内,而是逃逸出结区。这种载流子逃出量子阱的现象却没有在等量偏压下的NN型量子阱结构中发现,说明载流子逃出量子阱并非由传统的热激发或隧穿的作用导致。据此,笔者提出了相应的物理机制和载流子输运模型对此现象进行解释,认为光生载流子能在PN结内建电场的作用下直接逃出量子阱,并且辐射复合发光发生在载流子逃逸过程之后。Recently,the anomalous carrier transport in the quantum wells with the PN junction structures has been found experimentally,and the corresponding physical mechanism and the carrier transport model have been proposed.It is observed that the open circuit voltage or short-circuit current can be measured in the resonant excitation mode.Comparing the photoluminescence(PL)spectra of the two kinds of external circuits,it is found that the PL intensity decreased significantly under the short circuit condition.This suggests that the photogenerated carriers under the short circuit condition are not confined in the quantum well,but escaping from the junction region.However,this phenomenon of photocarriers escaping from the quantum wells is not found in the NN-type quantum well structure.Therefore,the effect of thermal excitation or tunneling is excluded to drive the carrier escaping from the quantum well.Based on this,the corresponding physical mechanism and carrier transport model are proposed.It is concluded that photogenerated carriers can escape from the quantum well directly under the built-in electric field of PN junction,and the radiative recombination luminescence occurs after the carrier escape process.

关 键 词：探测器 量子阱 载流子输运 

分 类 号：O471[理学—半导体物理] O475[理学—物理]