带浮空层的LDMOS器件特性研究  

作　　者：赵婉婉 冯懿 陈子馨 

机构地区：[1]上海电力大学,上海200090 [2]国核自仪系统工程有限公司,上海200241

出　　处：《科技创新与应用》2021年第10期63-65,共3页Technology Innovation and Application

摘　　要：为提升器件击穿特性,在Double-RESURF器件的衬底上引入N型的浮空层,构建出一种带部分浮空层的LDMOS器件。利用TCAD仿真软件对器件进行仿真,通过建立二维击穿模型的建立,对器件的结构参数进行优化,实现提升器件的击穿性能的目的。结果表明对器件结构参数进行优化可以改善器件的击穿性能。In order to improve the breakdown characteristics of a device,this paper introduces N-type floating layer on the substrate of Double-RESURF device,constructs a LDMOS device with part of the floating layer.TCAD simulation software was used to simulate the device,and the structural parameters of the device were optimized by establishing the two-dimensional breakdown model to improve the breakdown performance of the device.The results show that the breakdown performance of device can be improved by optimizing the structural parameters of the device.

关 键 词：浮空层 LDMOS 击穿电压 

分 类 号：TN40[电子电信—微电子学与固体电子学]