瞬时剂量率效应激光模拟测试技术  

Testing technology of laser simulation of transient dose rate effects

作　　者：倪涛[1,3] 杜川华 曾传滨[1,3] 高林春[1,3] 王娟娟[1,3] 高见头 赵发展[1,3] 罗家俊[1,3] NI Tao;DU Chuanhua;ZENG Chuanbin;GAO Linchun;WANG Juanjuan;GAO Jiantou;ZHAO Fazhan;LUO Jiajun(Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;Institute of Electronic Engineering,China Academy of Engineering Physics,Mianyang Sichuan 621999,China;Key Laboratory of Science and Technology on Silicon Device,Chinese Academy of Sciences,Beijing 100029,China)

机构地区：[1]中国科学院微电子研究所,北京100029 [2]中国工程物理研究院电子工程研究所,四川绵阳621999 [3]中国科学院硅器件技术重点实验室,北京100029

出　　处：《太赫兹科学与电子信息学报》2020年第6期1157-1161,共5页Journal of Terahertz Science and Electronic Information Technology

摘　　要：瞬时剂量率辐射效应模拟测试存在着试验资源有限、环境电磁干扰强、重复性不高等不利因素。本文开发了瞬时剂量率效应脉冲激光模拟测试技术,以1064 nm激光构建完整精细的剂量率效应地面模拟测试系统。利用此系统开展了不同工艺节点、不同沟道类型、不同衬底形式的瞬时剂量率效应实验研究。仿真实验结果表明相同条件下,体硅器件光电流比绝缘衬底上的硅(SOI)器件大10倍以上,光电流受源漏电压影响也大于SOI器件。There are some disadvantages in the simulation test of transient dose rate radiation effect,such as limited test resources,strong environmental electromagnetic interference and low repeatability.There are some disadvantages,such as limited test resources,strong electromagnetic interference and low repeatability.In this paper,the pulsed laser simulation test technology of transient dose rate effect is developed,and a complete and fine ground test system is constructed with 1064 nm laser.The transient dose rate effects of different process nodes,different channel types and different substrates are experimentally studied by using this system.The experimental results show that under the same conditions,the photocurrent of bulk silicon devices is more than 10 times larger than that of Silicon-On-Insulator(SOI),and the photocurrent is more affected by the source-drain voltage than SOI.

关 键 词：剂量率效应 激光模拟 体硅器件 SOI器件 

分 类 号：TN60[电子电信—电路与系统]