具有多场限环终端的PiN二极管反向击穿的研究  

Reverse breakdown study of PiN diode with multi-field limiting ring terminals

作　　者：刘晓忠 汪再兴[1] 孙霞霞 郑丽君 高金辉 LIU Xiaozhong;WANG Zaixing;SUN Xiaxia;ZHENG Lijun;GAO Jinhui(School of Electronics and Information Engineering,Lanzhou Jiaotong University,Lanzhou 730070,China)

机构地区：[1]兰州交通大学电子与信息工程学院,甘肃兰州730070

出　　处：《电子元件与材料》2021年第2期119-123,149,共6页Electronic Components And Materials

摘　　要：场限环终端结构可以有效提高击穿电压,因而被广泛应用于半导体功率器件。场限环中多个参数都影响PiN二极管主结的击穿能力。本文基于数值模拟软件建立PiN二极管的场限环终端仿真模型,并设计十道场限环作为终端结构。分别仿真场限环结深和漂移区掺杂浓度与主结的击穿电压的关系,得到结深和漂移区掺杂浓度与击穿电压的关系曲线。当漂移区掺杂浓度一定时,PiN二极管主结击穿电压随结深的增大而增大;当结深保持不变时,PiN二极管主结击穿电压随漂移区掺杂浓度的增大而减小。随后提取击穿时的电场分布,并分别从结表面和结曲面的峰值电场、电场分布均匀度两个方面分析击穿原理。The field limiting ring terminal structure can effectively increase the breakdown voltage,so it is widely used in semiconductor power devices.The parameters of the field limiting ring could affect the breakdown capability of the main junction of the PiN diode.In this paper,the simulation model of the field limiting ring terminal of the PiN diode was established,and ten rings was designed as the terminal structure.The relationships between main junction breakdown voltage with field limiting ring junction depth and the drift region doping concentration were simulated.When the doping concentration of the drift region is constant,the main junction breakdown voltage of the PiN increases with increasing of junction depth.When the junction depth remains the same,the main junction breakdown voltage of the PiN decreases with increasing doping concentration in the drift region.Then the electric field was extracted,and the peak electric field and the distribution uniformity of electric field were analyzed on the junction surface and junction curved surface,respectively.And the breakdown principle was obtained.

关 键 词：PIN二极管 场限环 击穿电压 结深 漂移区掺杂浓度 电场分布 

分 类 号：TN312.4[电子电信—物理电子学]