用RF-PECVD法制备类金刚石薄膜  

Preparation of Diamond-like Carbon Films on Top and Bottom Plates by RF-PECVD

作　　者：熊文文 何嵩 郑淞生 程其进 沈宏勋 陈朝 XIONG Wenwen;HE Song;ZHENG Songsheng;CHENG Qijin;SHENG Hongxun;CHEN Chao(College of Energy,Xiamen University,Xiamen 361102,China)

机构地区：[1]厦门大学能源学院,厦门361102

出　　处：《材料研究学报》2021年第2期154-160,共7页Chinese Journal of Materials Research

基　　金：福建省科技厅工业引导项目(2017H0038)。

摘　　要：用射频等离子体增强化学气相沉积(RF-PECVD)法在硅衬底上沉积类金刚石(DLC)薄膜,通过控制甲烷(CH4)与氩气(Ar)流量的比值(V_(CH4)/V_(Ar))分别在上极板和下极板上沉积制备出一系列DLC薄膜,用Raman光谱等检测技术表征了DLC薄膜的结构、表面粗糙度、表面形貌和硬度。结果表明:随着V_(CH4)/V_(Ar)比例的改变在下极板可制备出含有不同sp^(3)和sp^(2)杂化态比例(S_(sp)^(3)/S_(sp)^(2))的DLC薄膜。随着V_(CH4)/V_(Ar)的提高,在下极板沉积的DLC薄膜的S_(sp)^(3)/S_(sp)^(2)杂化态比值先上升后下降,V_(CH4)/V_(Ar)=1时的S_(sp)^(3)/S_(sp)^(2)杂化态比值达到最高1.34;而在上极板沉积的DLC样品其S_(sp)^(3)/S_(sp)^(2)比例没有明显的变化。在上极板进气口沉积样品比在下极板出气口沉积样品重复性好,样品更光滑致密、硬度更高。Diamond-like carbon(DLC)thin films were deposited on silicon plates,placed at the top and bottom of the reaction chamber respectively,by plasma-enhanced chemical vapor deposition(RF-PECVD).Various DLC thin films were obtained by changing the flow ratio of CH_(4) and Ar(V_(CH4)/V_(Ar)).The structure,surface roughness,surface morphology and hardness of DLC films were characterized by means of Raman spectroscopy and other methods.The results show that DLC films with different S_(sp)^(3)/S_(sp)^(2) ratios could be prepared on bottom plates by changing V_(CH4)/V_(Ar),while the S_(sp)^(3)/S_(sp)^(2) ratio kept constant for DLC films prepared on top plate.The films deposited on top plates placed near the gas inlet are smoother,denser,harder and more reproducible than that on bottom plates placed near the gas outlet.

关 键 词：材料结构与性能 稳定制备 RF-PECVD 类金刚石薄膜 流量比值 衬底位置 

分 类 号：TB34[一般工业技术—材料科学与工程]