基于产品结构的SSPC寄生参数提取及阻性负载开关特性仿真分析  

Extraction of SSPC Parasitic Parameters Based on Product Structure andSimulation Analysis of Resistive Load Switching Characteristics

作　　者：王浩南 赖耀康 张宏宇[1] 曹玉峰 叶雪荣[1] 翟国富[1] WANG Haonan;LAI Yaokang;ZHANG Hongyu;CAO Yufeng;YE Xuerong;ZHAI Guofu(Institute of Reliability in Electrical Apparatus and Electronics,Harbin Institute of Technology,Harbin 150001,China;Beijing Keytone Electronic Relay Co.,Ltd.,Beijing 100176,China)

机构地区：[1]哈尔滨工业大学电器与电子可靠性研究所,黑龙江哈尔滨150001 [2]北京科通电子继电器总厂有限公司,北京100176

出　　处：《电器与能效管理技术》2021年第2期25-30,共6页Electrical & Energy Management Technology

基　　金：国家自然科学基金(616711720);国家重点研发计划(2017YFB1300800)。

摘　　要：随着电动飞机的发展,固态功率控制器(SSPC)作为关键器件,逐渐成为国内外研究的热点。由于SSPC结构复杂且需要频繁调试,所以准确的仿真模型可以为产品设计提供较大帮助。主要使用Ansys Q3D Extractor等软件,对第三代CREE SiC MOSFET组成的SSPC进行基于产品结构的寄生参数提取,并建立SSPC单路和整体电学等效模型。对SSPC的阻性负载开关特性进行了仿真分析,发现波形中并无明显振荡现象。最后得出了寄生参数的影响基本可以忽略的结论。With the development of electric aircraft,the solid-state power controller(SSPC)composed of SiC devices has gradually become a hotspot at home and abroad.Due to the complex structure of SSPC and the need for frequent debugging,accurate simulation models can provide great help for product design.This article mainly used software such as Ansys Q3D Extractor to extract the parasitic parameters based on the product structure of the SSPC composed of the third generation CREE SiC MOSFET,and established the SSPC single-channel and overall electrical equivalent models.The characteristics of SSPC’s resistive load switching were analyzed and it was found that there is no obvious oscillation in the waveform.Finally,it was concluded that the influence of parasitic parameters can be ignored.

关 键 词：SSPC 寄生参数 电学等效模型 SiC MOSFET 开关特性 

分 类 号：TM571[电气工程—电器]