Ti掺杂MoS_(2)薄膜的抗氧化性和电学性能  

Anti-oxidization and Electronic Properties of Ti Doped MoS_(2) Films

作　　者：谢明玲 张广安[2] 史鑫 谭稀 高晓平[1] 宋玉哲[1] XIE Mingling;ZHANG Guang'an;SHI Xing;TAN Xi;GAO Xiaoping;SONG Yuzhe(Institute of Sensor Technology,Gansu Academy of Sciences,Lanzhou 730000,China;State Key Laboratory of Solid Lubrication,Lanzhou Institute of Chemical Physics,Lanzhou 730000,China)

机构地区：[1]甘肃省科学院传感技术研究所,兰州730000 [2]中科院兰州化学物理研究所,固体润滑国家重点实验室,兰州730000

出　　处：《材料研究学报》2021年第1期59-64,共6页Chinese Journal of Materials Research

基　　金：甘肃省科学院青年科技创新基金(2018QN-04);甘肃省科学院与中科院合作项目(2017HZ-02);甘肃省科学院创新团队建设项目(2020CX005-01);甘肃省科学院应用研究与开发计划项目(2018JK-16)。

摘　　要：用磁控溅射在硅片上制备MoS_(2)和Ti-MoS_(2)薄膜,并将其在恒温恒湿箱中在AT 30℃、RH 70%条件下存储360 h。使用XRD谱、XPS谱和紫外-可见分光光度计、四探针测试仪表征分析薄膜的结构、在恒温恒湿条件下存储前后的表面化学状态和电学性能,研究了Ti掺杂对薄膜抗氧化性和电学性能的影响。结果表明:Ti掺杂影响MoS_(2)薄膜的晶体取向。随着Ti靶电流的增大薄膜的结晶性变差,Ti靶电流为0.6A时薄膜呈无定型结构且禁带宽度减小、电导率提高;在恒温恒湿条件下存储后薄膜的部分氧化而呈MoS_(2)与MoO_(3)的复合状态,随着Ti靶电流的增大I_(Mo-O)/I_(Mo-S)比提高、禁带宽度略有增大,Ti靶电流为0.4A的Ti-MoS_(2)薄膜其化学稳定性较高。Thin films of MoS_(2) and Ti-MoS_(2) were deposited on Si substrate by using magnetron sputtering respectively, and then oxidized in atmosphere with 70%RH at 28℃ for 360 h via a temperature and humidity chamber. Thereafter, the oxidation performance and electrical properties of the above two MoS_(2) films were characterized by XRD, XPS, UV-Vis spectrophotometer and four-point probe method.The results show that the Ti doping can affect the crystal orientation of MoS_(2) film, and the X-ray diffraction peaks of(110) and(100) of MoS_(2) disappear after Ti doping. The films prepared with applied current of 0.6 A for Ti-target are amorphous. Whilst, the band gap of Ti-MoS_(2) decrease and the conductivity increase for films, with the increasing applied current for the Ti target. The films are partially oxidized and present the composite state of MoS_(2) and MoO_(3) after oxidation in the atmosphere with 70%RH at 28℃for 360 h, and the I_(Mo-O)/I_(Mo-S) ratio and band gap increase with the increasing applied current for the Ti target. Especially, the Ti-MoS_(2) film, prepared with applied current of 0.4 A for the Ti target, exhibits the better chemical stability.

关 键 词：材料科学基础学科 MoS_(2)薄膜 磁控溅射 抗氧化性 电学性能 

分 类 号：TH117[机械工程—机械设计及理论]