基于离子注入制备的InGaN横向Micro-LED阵列  

InGaN-based Lateral-structured Micro-LED Array Fabricated by Ion Implantation

作　　者：谭毅 庄永漳 卢子元 张晓东[1,2] 赵德胜[2] 蔡勇[2] 曾中明[1,2] 张宝顺 TAN Yi;CHONG Wing-cheung;LU Zi-yuan;ZHANG Xiao-dong;ZHAO De-sheng;CAI Yong;ZENG Zhong-ming;ZHANG Bao-shun(School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China;Key Laboratory of Multifunctional Nanomaterials and Smart Systems, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China)

机构地区：[1]中国科学技术大学纳米技术与纳米仿生学院,安徽合肥230026 [2]中国科学院苏州纳米技术与纳米仿生研究所多功能材料与轻巧系统重点实验室,江苏苏州215123

出　　处：《发光学报》2021年第2期215-222,共8页Chinese Journal of Luminescence

基　　金：国家自然科学基金(U1830112);江苏省自然科学基金(BK20191195);微波毫米波单片集成和模块电路重点实验室开放项目(6142803180407)资助。

摘　　要：采用离子注入工艺在InGaN/GaN量子阱蓝光LED结构的p-GaN层形成高阻态隔离区域,实现了最小4μm超小尺寸高光效Micro-LED阵列的制备,并系统研究了氟离子注入隔离工艺制备的横向结构Micro-LED阵列的电学和光学性能。实验结果表明,在采用的离子注入能量范围内,氟离子在p-GaN层中的注入深度越深,对应器件的电学和光学隔离效果越好。当离子注入能量为60 keV时,Micro-LED阵列具有相对最佳的光电效果,同时基于该离子注入能量制备的4μm超小尺寸Micro-LED阵列的光功率密度高达200 W/cm2,展现了离子注入工艺在新一代Micro-LED微显示芯片中的应用潜力。In this paper,an ion implantation process is used to form a high-resistance isolation region on the p-GaN layer of the InGaN/GaN quantum well blue LED structure.This method has been used to realize the preparation of ultra-small size and high luminous efficiency Micro-LED arrays with a minimum size of 4μm.The electrical and optical properties of lateral structure Micro-LED arrays prepared by fluoride ion implantation isolation process are systematically studied.Experimental results show that higher fluoride ion implantation energy can improve opticlal and electrical isolation between Miro-LEDs.When the ion implantation energy is 60 keV,the Micro-LED array has the relatively best photoelectric effect.And the 4μm ultra-small size Micro-LED array prepared based on this ion implantation energy has an optical power density of up to 200 W/cm2,demonstrating the application potential of ion implantation technology in a new generation of Micro-LED based micro-display chips.

关 键 词：蓝光Micro-LED 离子注入隔离 氮化镓 横向结构 高光功率密度 

分 类 号：TN312.8[电子电信—物理电子学]