Layout dependence of total-ionizing-dose response in 65-nm bulk Si pMOSFET  

作　　者：Zhexuan REN Xia AN Gensong LI Xing ZHANG Ru HUANG 

机构地区：[1]Key Laboratory of Microelectronic Devices and Circuits,Institute of Microelectronics,Peking University,Beijing 100871,China

出　　处：《Science China(Information Sciences)》2021年第2期267-268,共2页中国科学（信息科学）（英文版）

基　　金：supported in part by National Natural Science Foundation of China(Grant Nos.61421005,61434007);111 Project(Grant No.B18001)。

摘　　要：Dear editor,Strain technology has become a common solution in the semiconductor manufacturing industry since 90-nm technology node to overcome the severe carrier mobility degradation of nanoscale microelectronic devices[1].Since layout may affect the stress distribution,layout dependent effect(LDE)becomes a serious issue in advanced technology nodes.

关 键 词：PMOSFET Layout OVERCOME 

分 类 号：TN386[电子电信—物理电子学]