刻蚀辅助激光灰度改性技术制备硅基三维微结构  

Fabrication of silicon 3D microstructures by etching assisted femtosecond laser gray-scale modification

作　　者：李乾坤 刘学青 成荣[2] LI Qian-Kun;LIU Xue-Qing;CHENG Rong(State Key Laboratory of Precision Measurement Technology and Instruments,Department of Precision Instrument,Tsinghua University,Beijing 100084,China;Department of Mechanical Engineering,Tsinghua University,Beijing 100084,China)

机构地区：[1]清华大学精密仪器系精密测试技术及仪器国家重点实验室,北京100084 [2]清华大学机械工程系,北京100084

出　　处：《激光与红外》2021年第3期274-278,共5页Laser & Infrared

摘　　要：硅基三维微纳结构在红外成像与探测方面具有重要的应用价值。然而,受加工技术的限制,硅基复杂面型三维微纳结构的制备仍然是一个难题。本文提出了利用刻蚀辅助激光灰度改性技术制备硅基三维微纳结构。利用激光改性制备的硅的氧化层作为刻蚀掩膜,经过刻蚀实现灰度图形向衬底的转移。研究发现,氧化层的抗刻蚀能力可以通过激光加工参数进行调控,例如,激光功率和扫描间距。通过编程化设计的局部调控的抗刻蚀氧化层图形,刻蚀后实现了台阶状、斜面及曲面复杂三维微结构的可控制备。另外,验证了该技术在特殊面型硅基微光学器件制备中的可行性。The silicon three-dimensional micro/nanostructures have important applications in infrared imaging and detection.However,due to the limitation of processing technology,it is still a challenge to prepare complex three-dimensional micro/nanostructures on the silicon.This paper presents the idea of preparing three-dimensional micro/nanostructures by etching-assisted femtosecond laser gray-scale modification technology.The oxide siliconlayers prepared by laser modification can act as the etching mask,and then three-dimensional structures are fabricatedafter etching.The research indicates that laser processing parameters,such as laser power and scanning pitch,can adjust the anti-etching ability of the oxide layer.The controllable preparation of three-dimensional microstructures with stepped,slope shape and complex curved surfaces can be realized by etching the locally controlled anti-etching oxide layer pattern which is programming-designed.Besides,it also verifies the feasibility of this technology in the preparation of silicon-based micro-optical elements with complex profiles.

关 键 词：激光技术 刻蚀 灰度改性 硅基微纳结构 微光学元件 

分 类 号：TN249[电子电信—物理电子学]