高散热性能TGV转接板  

High Heat Dissipation Performance of the TGV Interposer

作　　者：王强文 郭育华[1] 刘建军[1] 王运龙[1] Wang Qiangwen;Guo Yuhua;Liu Jianjun;Wang Yunlong(The 38^(th)Research Institute,China Electronics Technology Group Corporation,Hefei 230088,China)

机构地区：[1]中国电子科技集团公司第三十八研究所,合肥230088

出　　处：《微纳电子技术》2021年第2期177-183,共7页Micronanoelectronic Technology

摘　　要：随着玻璃通孔(TGV)转接板在微波系统集成中的应用越来越广泛,其微波大功率应用情况下的散热性能成为研究重点。针对TGV转接板高效散热性能的要求,进行TGV散热结构的设计和性能分析。建立TGV转接板封装集成结构的有限元模型,设计TGV转接板铜柱阵列散热结构。通过TGV工艺制作TGV高密度阵列。在4.82~14.47 W功率范围内对TGV转接板的散热性能进行测试,相应的TGV散热结构区域的热流密度为40.03~120.18 W/cm^(2),测得热阻芯片表面温度高达54.0~126.5℃,低于微波功率芯片最高结温150℃,可以满足大功率微波系统集成高效散热的需求。The through glass via(TGV)interposer is more and more widely used in the integration of the microwave system,so the heat dissipation performance of the TGV interposer for high microwave power becomes the research focus.According to the requirements of the high heat dissipation performance of the TGV interposer,the design and performance analysis of the TGV heat dissipation structure were carried out.A finite element model of the packaging integrated structure of the TGV interposer was built to design the copper column array heat dissipation structure of the TGV interposer.Then the high density TGV array was fabricated by the TGV process.The heat dissipation performance of the TGV interposer was tested under the power range of 4.82-14.47 W,and the corresponding thermal flux of the TGV heat dissipation structure area was 40.03-120.18 W/cm^(2).The measured temperature on the thermal resistance chip surface was up to 54.0-126.5℃,lower than the highest junction temperature of the microwave power chip,i.e.150℃,meeting the high efficient heat dissipation requirements of the integration of high power microwave systems.

关 键 词：微波系统集成 玻璃转接板 玻璃通孔(TGV) 散热 热导率 

分 类 号：TN305.94[电子电信—物理电子学]