面向异质集成应用的BCB通孔刻蚀研究  

Research on benzocyclobutene dry-etching for heterogeneous integration application

作　　者：许理达 戴家赟 孔月婵[1] 王元[1] XU Lida;DAI Jiayun;KONG Yuechan;WANG Yuan(Nanjing Electronic Devices Institute,Nanjing 210016,China)

机构地区：[1]南京电子器件研究所,江苏南京210016

出　　处：《电子元件与材料》2021年第3期274-279,共6页Electronic Components And Materials

基　　金：微波毫米波单片集成和模块电路重点实验室基金(614280303041907)。

摘　　要：针对基于外延层转移技术的InP HBT与Si COMS异质集成工艺中的器件互连问题,本文系统性地开展了ICP干法刻蚀BCB(苯并环丁烯)工艺研究。重点研究了射频功率、腔室压强和刻蚀气体SF_(6)/O_(2)体积比等条件对刻蚀速率、刻蚀通孔洁净度和通孔侧壁形貌的影响。在此基础上通过相关刻蚀工艺的合理优化,实现了孔深5μm、深宽比1∶1、侧壁光滑、高垂直度的BCB通孔制备,相关研究为后续InP HBT等化合物半导体器件与Si CMOS器件间高密度的集成和高可靠的互连提供坚实的技术支撑。In order to realize the heterogeneous interconnection of InP HBT and Si COMS based on epitaxial layer transfer technology,the ICP dry etching process of BCB(benzocyclobutene)was systematically studied.The effects of RF power,chamber pressure and SF_(6)/O_(2) composition ratio on the etching characteristics,including etching rate,residue and sidewall morphology were discussed in details.By optimizing the process parameters of the etching,a 5μm deep,highly anisotropic and residue free BCB via with sidewall slopes about 90°is achieved,which provides solid technical support for high-density integration and high reliable interconnection between InP HBT like III-Vs and Si CMOS.

关 键 词：异质集成 通孔 干法刻蚀 苯并环丁烯 高垂直度 

分 类 号：TN405[电子电信—微电子学与固体电子学]