继电保护装置存储异常变位的容错设计与应用  

Error-tolerant Design and Application of Relay Protection Device Against Unexpected Memory Bit Change

作　　者：李友军 周华良[1,2,3] 郑玉平 邹志杨[1,2] 徐广辉 LI Youjun;ZHOU Hualiang;ZHENG Yuping;ZOU Zhiyang;XU Guanghui(NARI Group Corporation(State Grid Electric Power Research Institute),Nanjing 211106,China;NARI Technology Co.,Ltd.,Nanjing 211106,China;State Key Laboratory of Smart Grid Protection and Control,Nanjing 211106,China)

机构地区：[1]南瑞集团有限公司(国网电力科学研究院有限公司),江苏省南京市211106 [2]国电南瑞科技股份有限公司,江苏省南京市211106 [3]智能电网保护和运行控制国家重点实验室,江苏省南京市211106

出　　处：《电力系统自动化》2021年第7期155-162,共8页Automation of Electric Power Systems

基　　金：国家电网公司科技项目(5700-202040263A-0-0-00)。

摘　　要：继电保护装置用到的存储器类型包括非易失性存储器和随机存取存储器2种。这2种存储器的异常变位(单粒子效应)将导致继电保护装置的关键数据丢失、程序运行异常、整机功能失效和误动。文中针对随机存取存储器异常变位,设计了实时内存变位监控及变位恢复机制,避免了异常变位造成继电保护装置功能失效的问题;针对非易失性存储器异常变位,设计了冗余加固的文件存储方法,消除了异常变位对继电保护装置的影响。文中所提设计方法通过中子散列试验得到了实际验证,已应用于超高压继电保护装置并挂网运行,方案切实有效。Nonvolatile memory and random access memory(RAM)are two major types of memory used in relay protection devices.Both types of memory could have unexpected bit changes(single event effect)which lead to key data loss,abnormal program operation,maloperation,and device function failure.A scheme of real-time monitoring and recovery is designed to deal with unexpected bit changes in RAM,which can avoid function failure of relay protection devices.In addition,a redundant reinforcement method for file storage is designed to deal with unexpected bit changes in nonvolatile memory,which eliminates the influence of unexpected bit changes in nonvolatile memory on relay protection devices.The proposed scheme is verified by the spallation neutron test and applied to extra-high voltage relay protection devices operating in power grids,which proves the effectiveness of the scheme.

关 键 词：继电保护 软错误 单粒子效应 存储异常变位 文件加固 系统可靠性 

分 类 号：TM774[电气工程—电力系统及自动化]