低导通压降和低反向漏电流碳化硅肖特基二极管的研究  

Silicon Carbide Schottky Diodes with Low Conduction Voltage Drop and Low Reverse Leakage Current

作　　者：季益静 JI Yijing(Shanghai GTA Semiconductor Co.,Ltd.,Shanghai 201306,China)

机构地区：[1]上海积塔半导体有限公司,上海201306

出　　处：《集成电路应用》2021年第2期1-3,共3页Application of IC

基　　金：上海市经济和信息化委员会软件和集成电路产业发展专项基金(1600227)。

摘　　要：提出了一种具有低导通压降同时具有低漏电流的碳化硅650V肖特基二极管结构,基于半导体仿真软件Silvaco,验证了其正反向的器件性能,并与目前国际最新的商业化产品进行对比。使用更低势垒高度的钼(Mo)金属作为肖特基势垒金属,显著降低器件的开启阈值电压,利用碳化硅等离子干法刻蚀技术形成深沟槽,在此基础上离子注入形成的深P+结,可以在反向阻断时较好的屏蔽肖特基金属表面的电场强度,从而降低器件的反向漏电流。双外延的引入则大大降低了P+结之间的沟道电阻,提升器件整体导通性能。A SiC Schottky Diode of low forward voltage drop and low reverse leakage current was proposed in this paper.Based on the simulation results of EDA tools(Silvaco),the forward and reverse performance of the device were verified,comparisons with the state-of-the-art commercial products also were presented.By utilizing the low Schottky barrier height metal(Mo),the threshold voltage was reduced significantly.With the shield of the deep P+ well which were based on trench structure,the electric field on the Schottky surface was relieved,resulting in lower reverse leakage current.The double epitaxial layer could reduce the channel resistance,improvethe forward performance.

关 键 词：碳化硅肖特基二极管 Silvaco 势垒高度 双层外延 沟槽 

分 类 号：TN402[电子电信—微电子学与固体电子学] TN311.7