硅基紫外增强型光电二极管的研制  

Developement of Si-based Ultraviolet Enhanced Photodiodes

作　　者：黄烈云[1] 程顺昌[1] 刘钟远 向荣珍 龙雨霞 任利平[1] HUANG Lieyun;CHENG Shunchang;LIU Zhongyuan;XIANG Rongzhen;LONG Yuxia;REN Liping(Chongqing Optoeletronics Research Institute,Chongqing 400060,China)

机构地区：[1]重庆光电技术研究所,重庆400060

出　　处：《集成电路应用》2021年第3期1-3,共3页Application of IC

摘　　要：详细介绍了器件结构设计和制作工艺,描述了采用低能离子注入、高温快速热处理等工艺技术,研制出高性能硅基紫外增强型PIN光电二极管。对器件暗电流和光谱特性等进行了测试分析。实验结果表明,探测器暗电流小于1.0nA(V_(R)=100V),响应度达到0.13A/W(λ=250nm),响应时间约5.5ns(V_(R)=15V),量子效率在波长220~360nm范围内达到50%~70%。High performance Si-based ultraviolet enhanced PIN photodiodes were fabricated. The structure design and fabrication process of photodiodes were described in detail, and process techniques such as low energy ion implanting, high temperature rapid thermal annealing et. al. were introduced. The parameters including dark current, spectral responsivity were detected and analyzed. The results showed that the dark currents was lower than1.0 nA(V_(R)=100 V), the responsivity was 0.13 A/W(λ=250 nm), the response time was 5.50 ns(V_(R)=15 V), and the quantum efficiency achieve 50%~70% at the wavelength range from 220 nm to 360 nm.

关 键 词：紫外增强 PIN光电二极管 暗电流 响应度 

分 类 号：TN312[电子电信—物理电子学] TN365