基于Simulink的SiC MOSFET功率器件建模  

Study on Power Device Modeling of SiC MOSFET Based on Simulink

作　　者：杨永明 王超[1] 迟耀丹[1] YANG Yongming;WANG Chao;CHI Yaodan(School of Electrical and Computer,Jilin Architecture University,Jilin 130118,China)

机构地区：[1]吉林建筑大学电气与计算机学院,吉林130118

出　　处：《集成电路应用》2021年第3期11-13,共3页Application of IC

基　　金：吉林省科技发展计划项目(20200403137SF)。

摘　　要：基于Matlab作为常用的仿真软件没有自带的SiC MOSFET模型,阐述利用Simulink中function模块构建了SiC MOSFET模型,并与手册中输出特性曲线和转移特性曲线进行比较,验证了模型的正确性和精确性。Based on Matlab as a commonly used simulation software, and no built-in SiC MOSFET model, this paper describes the use of function module in Simulink to build a SiC MOSFET model, and compares with the output characteristic curve and transfer characteristic curve in the manual to verify the correctness and accuracy of the model.

关 键 词：SiC MOSFET SIMULINK MATLAB模拟 曲线拟合 

分 类 号：TN303[电子电信—物理电子学]