双离子束溅射Al_(2)O_(3)薄膜高温绝缘特性的研究  

High temperature electrical insulation property of DIBSD sputtered Al_(2)O_(3) thin film

作　　者：张丛春[1] 黄漫国[2,3] 梁晓波 闫博 ZHANG Congchun;HUANG Manguo;LIANG Xiaobo;YAN Bo(Department of Micro/Nano Electronics,Shanghai Jiao Tong University,Shanghai 200240,China;Beijing Changcheng Aeronautic Measurement and Control Technology Research Institute,Advanced Sensor Technology Center,Beijing 100022,China;Key Laboratory of Science and Technology on Special Condition Monitoring Sensor Technology,Beijing 100022,China)

机构地区：[1]上海交通大学微纳电子学系,上海200240 [2]北京长城航空测控技术研究所先进传感器技术中心,北京100022 [3]状态监测特种传感技术航空科技重点实验室,北京100022

出　　处：《电子元件与材料》2021年第4期311-315,共5页Electronic Components And Materials

基　　金：国家自然科学基金(11461063);新疆维吾尔自治区自然科学基金(2017D01A24);新疆财经大学基金(2019XTD002)。

摘　　要：随着薄膜传感器在航空工业中的应用,高温绝缘层的研究发展愈加重要。在此研究背景下,采用双离子束溅射的方法制备了Al2 O3薄膜高温绝缘层,探讨了溅射时的衬底温度对Al2 O3薄膜物相结构的影响,并研究了所制备的Al2 O3薄膜从室温至1000℃范围内的绝缘特性。另外,本文还将所制备的Al2 O3薄膜高温绝缘层应用在热阻型温度传感器中,测试了其在高温环境中的表现。结果表明:双离子束溅射沉积的Al2 O3薄膜主要以非晶形式存在,薄膜断面的微观形貌致密;2μm厚度的Al2 O3薄膜的室温电阻可达2 GΩ,800℃下电阻可达到5 kΩ,表明双离子束溅射方法制备的Al2 O3薄膜绝缘层具有良好的高温绝缘性能。With the application of MEMS sensor in aircraft industry,the development of high temperature electrical insulation becomes more important than ever.In this work,Al2 O3 thin film for high temperature electrical insulation was prepared by Dual Ion Beam Sputtering Deposition(DIBSD).The effect of the substrate temperature on the structure of assputtered Al2 O3 thin films was analyzed by XRD and AFM,and the electrical resistance of Al2 O3 thin films at temperature range from 25℃to 1000℃was also studied.Besides,thin film resistance temperature sensor was fabricated with as-sputtered Al2 O3 thin film.The result shows that Al2 O3 thin film sputtered by DIBSD is mainly in amorphous phase with compact and holeless structure.The electrical resistance of Al2 O3 thin film with 2μm thickness could achieve 2 GΩand 5 kΩat room temperature and 800℃,respectively,which indicates good high temperature electrical resistance of the as-sputtered Al2 O3 thin film.

关 键 词：双离子束溅射沉积 Al_(2)O_(3)薄膜 衬底温度 高温绝缘 温度传感器 

分 类 号：O484.42[理学—固体物理]