InGaN/GaN多层球形核壳结构量子点中类氢杂质态的结合能  

Binding Energies of Hydrogenic Impurity States in InGaN/GaN Multilayer Spherical Core-Shell Quantum Dots

作　　者：谢慧 邢雁[1] XIE Hui;XING Yan(School of Physical Science and Technology,Inner Mongolia University,Hohhot 010021,China)

机构地区：[1]内蒙古大学物理科学与技术学院,呼和浩特010021

出　　处：《内蒙古大学学报（自然科学版）》2021年第2期136-142,共7页Journal of Inner Mongolia University：Natural Science Edition

基　　金：国家自然科学基金(12064031);内蒙古自治区高等学校科学研究项目(NJZZ19001)。

摘　　要：在有效质量近似下,采用有限差分法研究了InGaN/GaN/InGaN/GaN球形核壳量子点中类氢杂质基态和激发态的结合能,数值计算了杂质态结合能随量子点核半径、壳层厚度和阱宽的变化关系。结果表明,核半径和阱宽对杂质态结合能的影响显著,随着核半径的增加,结合能先减小后增大,而后递减且逐渐趋于单量子点的结合能;而随着阱宽的增加,基态和激发态的结合能均单调减小,最后趋于同一定值。同时发现,壳层厚度达到一定值后,结合能不再发生变化。Within the framework of the effective mass approximation, the ground and excited state donor binding energies of a hydrogenic impurity in a InGaN/GaN/InGaN/GaN spherical core-shell quantum dot(CSQD) are investigated by using the finite-difference method.The numerical calculation is carried out for the binding energy of impurity states as a function of core radius, shell thickness and well width in CSQDs.The results show that when the core radius increases, the binding energy first decreases and then increases.With further increasing of the core radius, the binding energy decreases and gradually exhibits the properties of a single QD.As the well width increases, the binding energies decrease rapidly and then tends to a certain value.Moreover, it is also found that the binding energies remains a constant value when the shell thickness reaches a certain value.

关 键 词：核壳量子点 结合能 类氢杂质态 

分 类 号：O471.3[理学—半导体物理]