多晶硅发射极晶体管放大系数稳定性研究  

Research on the Stability of Amplification Coefficient of Ploysilicon Emitter Transistor

作　　者：孙建洁 张可可 许帅 张明 SUN Jianjie;ZHANG Keke;XU Shuai;ZHANG Ming(Wuxi Zhongwei Microchips Co.,Ltd.,Wuxi 214035,China)

机构地区：[1]无锡中微晶园电子有限公司,江苏无锡214035

出　　处：《电子与封装》2021年第4期50-53,共4页Electronics & Packaging

摘　　要：通过对NPN型多晶硅发射极晶体管的工艺过程进行分析,对多晶淀积工艺过程提出严格的控制方案,使多晶界面氧化层厚度稳定在0.6~0.8 nm。同时,对基区与发射区退火工艺进行优化,使多晶发射极晶体管放大系数的片内均匀性从30%改善至20%,片间均匀性从12%改善至9%,显著提升了产品的成品率。In this paper,the technological process of NPN type ploysilicon emitter transistor is analyzed,and a strict control scheme is proposed for the ploysilicon deposition process,so that the thickness of the oxide layer at the multi-grain interface is stable at 0.6-0.8 nm.At the same time,the annealing process of base area and transmitting area was optimized,which improved the inter-chip uniformity of the amplification coefficient of the ploysilicon emitter transistor from 30%to 20%,and the uniformity between the chips increased from 12%to 9%,which significantly improved the product yield.

关 键 词：多晶硅发射极晶体管 放大系数 界面氧化层 退火 

分 类 号：TN305[电子电信—物理电子学]