基于高温热处理的InSb晶片性能研究  

Study on Performance of InSb Wafer Based on High-temperature Heat Treatment

作　　者：柏伟[1] 张立超 徐强强[1] 赵超[1] 刘铭[1] BAI Wei;ZhANG Li-chao;XU Qiang-qiang;ZHAO Chao;LIU Ming(North China Research Institute of Electro-Optics,Beijing 100015,China)

机构地区：[1]华北光电技术研究所,北京100015

出　　处：《红外》2021年第4期9-14,共6页Infrared

摘　　要：近年来,为了满足新一代百万像元、高集成度、高性能红外焦平面探测器的发展需求,人们对高晶格质量、高表面状态InSb晶片的要求越来越高。为了提高用生长态晶体加工的InSb晶片的性能,对晶片高温热处理进行了研究。通过采用特殊设计的晶片承载装置并结合相应的晶片热处理配合方法,优化了晶体生长态遗传的固有缺陷以及由晶片加工过程引入的加工缺陷;改善了InSb晶片的化学计量比,释放了晶片内部的残余应力;提高了晶格质量,优化了晶片整片的平面度,最终提高了InSb晶片的整体质量,为制备高性能大规格红外焦平面探测器奠定了材料基础。In recent years,in order to meet the development needs of a new generation of infrared focal plane detectors with megapixels,high integration and high performance,the demand for InSb wafers with high lattice quality and high surface state is increasing.In order to improve performance of the InSb wafers processed with as-grown crystal,the high temperature heat treatment of the wafer is studied.The inherent defects of crystal growth and the process defects introduced by wafer processing are optimized through using a specially designed wafer loading device combined with the corresponding heat treatment method.The stoichiometric ratio of the InSb wafer is improved,and the residual stress inside the wafer is released.The quality of the crystal lattice is improved,the flatness of the whole wafer is optimized,and the overall quality of the InSb wafer is finally improved,which laid a material foundation for the production of high performance and large size infrared focal plane detectors.

关 键 词：锑化铟晶片 热处理 应力 平面度 晶格质量 

分 类 号：TN213[电子电信—物理电子学]