一种MEMS用硅单晶的缺陷检验方法  

A Defect Inspection Method of Silicon Single Crystal for MEMS

作　　者：高丹[1] Gao Dan(The 46th Research Institute of CETC,Tianjin 300220,China)

机构地区：[1]中国电子科技集团公司第四十六研究所,天津300220

出　　处：《电子工业专用设备》2021年第2期43-45,共3页Equipment for Electronic Products Manufacturing

摘　　要：为了查找影响MEMS(微机电系统)器件缺陷的关键因素,通过模拟键合硅片的加工工艺开展了实验,探索出一种MEMS用硅单晶的缺陷检验方法。结果表明这种检验方法可以提前判断硅单晶是否可用于MEMS体硅工艺,对工业化生产具有很好的指导借鉴作用。In order to find out the key factors that affect the defects of MEMS(micro electro mechanical system)devices,experiments are carried out by simulating the processing technology of bonded silicon wafer,and a defect inspection method of silicon single crystal for MEMS was explored.The results show that this method can be used to judge whether the silicon single crystal can be used in MEMS bulk silicon process in advance,which has a good guidance for industrial production.

关 键 词：微机电系统 单晶缺陷 检验方法 

分 类 号：TN307[电子电信—物理电子学]