用于ESD防护的PDSOI NMOS器件高温特性  

High-Temperature Characteristics of PDSOI NMOSFETs with ESD Protection

作　　者：王加鑫 李晓静 赵发展[1,2] 曾传滨[1,2] 李博 韩郑生[1,2,3] 罗家俊[1,2] Wang Jiaxin;Li Xiaojing;Zhao Fazhan;Zeng Chuanbin;Li Bo;Han Zhengsheng;Luo Jiajun(Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;Key Laboratory of Science and Technology on Silicon Devices,Chinese Academy of Sciences,Beijing 100029,China;University of Chinese Academy of Sciences,Beijing 100049,China)

机构地区：[1]中国科学院微电子研究所,北京100029 [2]中国科学院硅器件技术重点实验室,北京100029 [3]中国科学院大学,北京100049

出　　处：《半导体技术》2021年第3期210-215,共6页Semiconductor Technology

基　　金：国家自然科学基金青年基金资助项目(61804168)。

摘　　要：研究了基于0.18μm部分耗尽型绝缘体上硅(PDSOI)工艺的静电放电(ESD)防护NMOS器件的高温特性。借助传输线脉冲(TLP)测试系统对该ESD防护器件在30~195℃内的ESD防护特性进行了测试。讨论了温度对ESD特征参数的影响,发现随着温度升高,该ESD防护器件的一次击穿电压和维持电压均降低约11%,失效电流也降低近9.1%,并通过对器件体电阻、源-体结开启电压、沟道电流、寄生双极结型晶体管(BJT)的增益以及电流热效应的分析,解释了ESD特征参数发生上述变化的原因。研究结果为应用于高温电路的ESD防护器件的设计与开发提供了有效参考。The high-temperature characteristics of the NMOSFET with electrostatic discharge(ESD)protection based on the 0.18μm partially depleted silicon-on-insulator(PDSOI)technology were studied.The ESD protection characteristics in the temperature range of 30-195℃of the ESD protection device were measured by the transmission line pulse(TLP)test system.The effect of temperature on the ESD characteristic parameters was discussed.It is found that the first breakdown vol-tage and the holding voltage of the ESD protection device are both decreased by about 11%,and the fai-lure current also shows a degradation of nearly 9.1%with the increasing temperature.The reasons for the changes of the ESD characteristic parameters were explained by analyzing the body resistance,turn-on voltage of the source-body junction,channel current,the gain of the parasitic bipolar junction transistor(BJT)and current thermal effects of the device.The research results provide a useful reference for the design and development of ESD protection devices applied to the high-temperature circuit.

关 键 词：静电放电(ESD) 绝缘体上硅(SOI) NMOSFET 高温 传输线脉冲(TLP) 

分 类 号：TN402[电子电信—微电子学与固体电子学]