二硫化钨/石墨烯垂直异质结阵列构筑实验方法  

An Experimental Method of Fabricating Vertically Stacked Heterojunction Arrays of WS_(2)/Graphene

作　　者：王震东[1] 王剑宇 王立[1] WANG Zhendong;WANG Jianyu;WANG Li(Department of Physics,Nanchang University,Nanchang 330031,China)

机构地区：[1]南昌大学物理系,南昌330031

出　　处：《实验室研究与探索》2021年第4期1-3,共3页Research and Exploration In Laboratory

基　　金：国家自然科学基金项目(61764011);南昌大学教改研究项目(NCUJGLX-17-109)。

摘　　要：提出了一种垂直堆垛异质结阵列构筑的实验方法,有望实现二维垂直异质结的宏量制备。该方法首先利用光刻技术形成Pt/Ti金属阵列的诱导作用,使用化学气相沉积法生长二维WS_(2)晶体阵列,然后用热剥离转移法将WS_(2)晶体阵列整体转移到石墨烯连续膜上,形成垂直堆垛的WS_(2)/石墨烯异质结阵列。扫描电子显微镜测试显示WS_(2)晶体围绕金属点生长,透射电子显微镜证实生长的WS_(2)晶体具有良好的结晶性能。对通过转移方法形成的异质结样品使用Raman光谱测试发现WS_(2)晶体被成功地转移在石墨烯膜上。In this paper,an experimental method of fabricating vertically stacked heterojunction arrays is proposed,it is promising for realizing high-throughout fabrication of two-dimensional vertical heterojunction.Firstly,using induced effect of Pt/Ti metal array formed by photolithography,two-dimensional WS_(2) crystal arrays are grown by chemical vapor deposition,and then WS_(2) crystal arrays are transferred on grapheme thin films by hot peeling technology to form vertically stacked WS_(2)/graphene heterojunction arrays.Scanning electron microscopy(SEM)shows that WS_(2) crystal grows around metal dots.Transmission electron microscopy confirmes that WS_(2) crystal shows good crystallization properties.In addition,it is further confirmed by Raman spectroscopy measure that the WS_(2) crystals are transferred onto the graphene thin films for fabricating the heterojunction.

关 键 词：二硫化锡 石墨烯 范德华异质结 化学气相沉积 

分 类 号：O475[理学—半导体物理] O782.9[理学—物理]