高性能GaN微波整流肖特基二极管的设计和制作  

Design and Fabrication of High Performance GaN Microwave Rectification Schottky Diodes

作　　者：钟易润 李杨 谭庶欣 蒲涛飞 罗向东[1] 敖金平 Zhong Yirun;Li Yang;Tan Shuxin;Pu Taofei;Luo Xiangdong;Ao Jinping(School of Information Science and Technology,Nantong Uniersity,Nantong 226019,China;School of Microelectronics,Xidian University,Xi'an 710071,China;Department of Science and Technology,Tokushima University,Tokushima 770-8506,Japan)

机构地区：[1]南通大学信息科学技术学院,江苏南通226019 [2]西安电子科技大学微电子学院,西安710071 [3]德岛大学理工学院,德岛770-8506

出　　处：《半导体技术》2021年第4期295-299,336,共6页Semiconductor Technology

基　　金：国家自然科学基金面上项目(61874007,62074087)。

摘　　要：通过对准垂直型GaN微波整流肖特基二极管结构的研究,建立了二极管势垒层和传输层模型,根据模型提出了图形化和多空气桥结构来应对现有GaN生长技术不成熟带来额外寄生电阻的问题,并设计制作出联U型器件。为了验证结构的优势,同时制作了用于对比的传统指型器件。通过大量测试,得到联U型器件的平均寄生电阻为2.38Ω,约为指型器件的89.8%。零偏压下联U型器件的结电容为0.48 pF,约为指型器件的90.6%。联U型器件的平均截止频率为139 GHz,相比指型器件提高了约23%。在不增加寄生电容、不牺牲功率容量的情况下,降低了二极管的寄生电阻,大大提高了高频状况下GaN微波整流二极管的整流效率。By studying the structure of quasi-vertical GaN microwave rectification Schottky diodes,the barrier layer and transmission layer models of the diodes were established.According to the models,patterned and multiple air-bridges structures were proposed to deal with the problem of extra parasitic resistance caused by the immature GaN growth technology,and a union U-shaped device was designed and manufactured.In order to verify the advantages of the structure,a conventional finger-shaped device was fabricated for comparison.Through a large number of tests,it is found that the average parasitic resistance of the union U-shaped device is 2.38Ω,which is about 89.8%of the finger-shaped device.Under zero bias,the junction capacitance of the union U-shaped device is 0.48 pF,which is about90.6%of the finger-shaped device.The average cut-off frequency of the union U-shaped device is139 GHz,which is about 23%higher than that of the finger-shaped device.Without increasing the parasitic capacitance and sacrificing the power capacity,the parasitic resistance of the diode is reduced,which greatly improves the rectification efficiency of the GaN microwave rectification diode at high frequency.

关 键 词：GAN 截止频率 微波整流 图形化结构 肖特基二极管 

分 类 号：TN311.7[电子电信—物理电子学]