基于TCAD模型仿真的65纳米CMOS标准单元单粒子闩锁效应防护设计  

Modeling and mitigating single event latch-up in 65nm CMOS standard cell

作　　者：安刚 唐硕 王轩 史合 王倩琼 邓星星 AN Gang;TANG Shuo;WANG Xuan;SHI He;WANG Qian-qiong;DENG Xing-xing(Xi’an Institute of Space Radio Technology,No.504 Changan street,Xi’an 710100,China)

机构地区：[1]西安空间无线电技术研究院,陕西西安710100

出　　处：《微电子学与计算机》2021年第5期73-79,共7页Microelectronics & Computer

摘　　要：为提高标准单元在空间辐射条件下抗单粒子闩锁能力,基于65 nm CMOS工艺使用TCAD工具建立了4种保护环结构的3D模型.设计对比了多种抗单粒子闩锁加固方法,对抗辐照性能和设计开销进行了优化.仿真结果显示,使用半封闭型保护环结构可在满足抗辐照要求的情况下最小化设计开销,同时通过模拟辐照仿真对该结构的关键设计参数进行了优化.基于提出的版图加固设计标准单元开发了测试芯片并完成了重粒子试验,经过99.8 MeV*cm^(2)/mg重离子辐照未观察到闩锁现象.Aiming to improve the single event latch-up(SEL)performance of CMOS stand cell in 65-nm process,3 D models of four guard ring had been built up by using Technology Computer Aided Design(TCAD)tool.Several different structures had been compared with TCAD simulation to compromise the anti-SEL performance and design costs.The simulation results showed that the unclosed guard ring structures was the best choice for stand cell of 65-nm,and the key design parameters of the structure are optimized by simulating irradiation simulation.A test chip using proposed radiation harden library had been tested in heavy ion experiment and no SEL occurred up to a LET of 99.8 MeV/mg/cm^(2).

关 键 词：单粒子闩锁 CMOS TCAD LET 重离子试验 

分 类 号：TN433[电子电信—微电子学与固体电子学]