一种低插损高隔离度毫米波SPDT开关  

A Low Loss High Isolation Millimeter Wave SPDT Switch

作　　者：彭雄 刘韬 陈昆 乔哲 PENG Xiong;LIU Tao;CHEN Kun;QIAO Zhe(Chongqing Acoustic Optic Electronic Co.,Ltd.of China Electromics Technology Group Corp.,Chongqing 401332,P.R.China;Chongqing Southuest Integrated Circuit Design Co.,Ltd.,Chongqing 401332,P.R.China;The 24th Research Institute of China Electronics Technology Group Cor poration,Chongqing 400060 P.R.China)

机构地区：[1]中电科技集团重庆声光电有限公司,重庆401332 [2]重庆西南集成电路设计有限责任公司,重庆401332 [3]中国电子科技集团公司第二十四研究所,重庆400060

出　　处：《微电子学》2021年第2期216-220,共5页Microelectronics

基　　金：模拟集成电路国家重点实验室基金资助项目(6142802011503)。

摘　　要：基于55 nm CMOS工艺,设计了一种工作于28 GHz的对称型单刀双掷(SPDT)开关。采用串并联拓扑结构实现高隔离度,通过MOS管与电感器构成的开关电感进行LC阻抗匹配,从而实现了低插入损耗和较小芯片面积。开关管采用悬浮衬底设计,减小了插入损耗,提高了线性度。仿真结果表明,该SPDT开关在工作频率下,插入损耗小于1.7 dB,隔离度大于30 dB,输入输出回波损耗小于-20 dB,输入1 dB压缩点为12 dBm。芯片尺寸为240μm×180μm。A symmetrical SPDT switch working at 28 GHz was designed in a 55 nm CMOS process. The series-parallel structure was used to realize high isolation. The LC impedance matching was carried out by the switch inductor composed of MOS transistor and inductor, so as to achieve low insertion loss and small chip area. The body-floating technology was used to improve the insertion loss and linearity. The simulation results showed that the insertion loss of the SPDT switch was less than 1.7 dB, the isolation was more than 30 dB, the return loss of the input and output was less than-20 dB, and the input 1 dB compression point was 12 dBm. The chip size was 240 μm ×180 μm.

关 键 词：SPDT开关 开关电感 浮体 CMOS工艺 

分 类 号：TN432[电子电信—微电子学与固体电子学]